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BC184

P1-P3
BC184 — Silicon NPN Small Signal Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC184 Rev. 1.0.0 1
September 2007
BC184
Silicon NPN Small Signal Transistor
•BV
CEO
= 30V (Min.)
•h
FE
= 130 (Min.) @V
CE
= 5.0V, I
C
= 100mA
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
a
=25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 45 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 100 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
1. Collector 2. Base 3. Emitter
TO-92
1
BC184 — Silicon NPN Small Signal Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC184 Rev. 1.0.0 2
Electrical Characteristics T
C
=25°C unless otherwise noted
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150degrees C.
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Voltage I
C
= 10μA 45 V
BV
CEO
Collector-Emitter Voltage I
C
= 2mA 30 V
BV
EBO
Emitter-Base Voltage I
E
= 10μA 5 V
I
EBO
Emitter Cut-off Current V
EB
= 4V 15 nA
I
CBO
Collector Cut-off Current V
CB
= 30V 15 nA
h
FE
DC Current Gain
V
CE
= 5V, I
C
= 10μA
V
CE
= 5V, I
C
= 100mA
100
130
V
CE
(sat) Collector-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
0.25
0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 100mA, I
B
= 5mA 1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 2mA 0.55 0.7 V
C
ob
Output Capacitance V
CE
= 10V, f = 1MHz 5 pF
f
T
Current gain Bandwidth Product V
CE
= 5V, I
C
= 10mA, f = 100MHz 150 MHz
BC184 Silicon NPN Small Signal TransistorBC184
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx
®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
FAST
®
FastvCore™
FPS™
FRFET
®
Global Power Resource
SM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
Motion-SPM™
OPTOLOGIC
®
OPTOPLANAR
®
®
PDP-SPM™
Power220
®
Power247
®
POWEREDGE
®
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC
®
UniFET™
VCX™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC184 Rev. 1.0.0 3
P1-P3

BC184

Mfr. #:
Buy BC184
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN 30V 100mA HFE/8
Lifecycle:
New from this manufacturer.
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