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NRVB8H100MFST3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 2
1 Publication Order Number:
MBR8H100MFS/D
MBR8H100MFS,
NRVB8H100MFS
Switch Mode
Power Rectifiers
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• WF Suffix for Products with Wettable Flanks
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 165°C)
I
F(AV)
8.0 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave,
20 kHz, T
C
= 162°C)
I
FRM
16 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
FSM
75 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +175 °C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
75 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA
Device Package Shipping
†
ORDERING INFORMATION
MBR8H100MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
100 VOLTS
www.onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B8H100 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
B8H100
AYWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR8H100MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
NRVB8H100MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
NRVB8H100MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
NRVB8H100MFSWFT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
NRVB8H100MFSWFT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
MBR8H100MFS, NRVB8H100MFS
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
− 2.2 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 8 Amps, T
J
= 125°C)
(i
F
= 8 Amps, T
J
= 25°C)
v
F
0.68
0.81
0.76
0.90
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
180
0.06
300
2
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.00.60.40.20
0.1
1
10
100
0.60.40.20
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
6050403020100
1.E−12
10050403020100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.2
T
A
= 175°C
125°C
150°C
25°C −40°C
0.8 1.0 1.2
T
A
= 175°C
125°C
150°C
25°C −40°C
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
1.E−11
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
0.8
100908070
1.E−10
1.E−11
60 8070 90
1.E−10
MBR8H100MFS, NRVB8H100MFS
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 5. Typical Junction Capacitance Figure 6. Current Derating
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
10050403020100
10
100
1,000
1601401201008060
0
2
4
6
8
12
14
20
Figure 7. Forward Power Dissipation
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
43210
0
1
2
3
5
6
7
8
Figure 8. Thermal Response
PULSE TIME (sec)
0.010.001 100.0001 1000.00001 1,0000.000001
0.001
0.01
0.1
1
10
100
C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
P
F(AV)
, AVERAGE FORWARD POW-
ER DISSIPATION (W)
R(t) (°C/W)
T
J
= 25°C
10
R
q
JC
= 2.2°C/W
Square Wave
dc
T
J
= 175°C
4
Square Wave
dc
I
PK
/I
AV
= 20
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
10.1
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
a 600 mm
2
− oz copper pad on PCB
60 8070 90
16
18
P1-P3P4-P4

NRVB8H100MFST3G

Mfr. #:
Buy NRVB8H100MFST3G
Manufacturer:
ON Semiconductor
Description:
Rectifiers 8.0 A, 100 V SCHOTTKY DIO
Lifecycle:
New from this manufacturer.
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