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NSBA113EF3T5G

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2012
October, 2016 − Rev. 6
1 Publication Order Number:
DTA113E/D
MUN2130, MMUN2130L,
MUN5130, DTA113EE,
DTA113EM3, NSBA113EF3
Digital Transistors (BRT)
R1 = 1 kW, R2 = 1 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Collector−Base Voltage V
CBO
50 Vdc
Collector−Emitter Voltage V
CEO
50 Vdc
Collector Current − Continuous I
C
100 mAdc
Input Forward Voltage V
IN(fwd)
10 Vdc
Input Reverse Voltage V
IN(rev)
10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
See detailed ordering, marking, and shipping information on
page 2 of this data sheet.
ORDERING INFORMATION
www.onsemi.com
PIN CONNECTIONS
SC−75
CASE 463
STYLE 1
MARKING DIAGRAMS
XXX = Specific Device Code
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC−59
CASE 318D
STYLE 1
SOT−23
CASE 318
STYLE 6
SC−70/SOT−323
CASE 419
STYLE 3
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XX MG
G
1
1
XXX MG
G
XX MG
G
1
XX M
1
X M
XX M
1
1
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
www.onsemi.com
2
Table 1. ORDERING INFORMATION
Device Part Marking Package Shipping
†
MUN2130T1G 6G SC−59
(Pb−Free)
3000 / Tape & Reel
MMUN2130LT1G A6G SOT−23
(Pb−Free)
3000 / Tape & Reel
MUN5130T1G 6G SC−70/SOT−323
(Pb−Free)
3000 / Tape & Reel
DTA113EET1G 6G SC−75
(Pb−Free)
3000 / Tape & Reel
DTA113EM3T5G, NSVDTA113EM3T5G* 7E SOT−723
(Pb−Free)
8000 / Tape & Reel
NSBA113EF3T5G L (180°)** SOT−1123
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
** (xx°) = Degree rotation in the clockwise direction.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
P
D
, POWER DISSIPATION (mW)
150
(1) (2) (3) (4) (5)
(1) SC−75 and SC−70/SOT323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm
2
, 1 oz. copper trace
(5) SOT−723; Minimum Pad
MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
www.onsemi.com
3
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
10
1
0.1
0.01
05010 20 30 40
Figure 2. V
CE(sat)
vs. I
C
T
A
= 150°C
T
A
= −55°C
T
A
= 25°C
I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (mA)
H
FE
, DC CURRENT GAIN
100
0.1 100110
Figure 3. DC Current Gain
T
A
= 150°C
T
A
= −55°C
T
A
= 25°C
V
CE
= 10 V
V
in
, INPUT VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
100
0 2.50.5 1 1.5 2
Figure 4. Output Current vs. Input Voltage
V
o
= 5 V
T
A
= 25°C
T
A
= −55°C
T
A
= 150°C
10
1
0.1
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
05030 40
Figure 5. Input Voltage vs. Output Current
10 20
T
A
= 25°C
T
A
= 150°C
T
A
= −55°C
V
o
= 0.2 V
100
10
1
0.1
V
R
, REVERSE VOLTAGE (V)
C
ob
, OUTPUT CAPACITANCE (PF)
12
010203040
Figure 6. Output Capacitance
10
8
6
4
2
0
5152535
f = 10 kHz
I
E
= 0 V
T
A
= 25°C
10
1
0.1
P1-P3P4-P6P7-P9P10-P11

NSBA113EF3T5G

Mfr. #:
Buy NSBA113EF3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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