BAS21A RFG

Small Signal Product
- Fast switching speed
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
- Case: SOT-23 small outline plastic package
- Weight: 8 ± 0.5 mg
SYMBOL UNIT
P
D
mW
V
RRM
V
I
FRM
mA
I
O
mA
I
FSM
A
R
θJA
o
C/W
T
J
, T
STG
o
C
2. Valid provided that electrodes are kept at ambient temperature
SYMBOL UNIT
V
R(BR)
V
I
R
μA
C
J
pF
trr ns
Document Number: DS_S1412039 Version: D14
BAS21 / A / C / S
Taiwan Semiconductor
225mW SMD Switching Diode
FEATURES
SOT-23
MECHANICAL DATA
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER VALUE
625
200Mean Forward Current
Repetitive Peak Forward Current
225
250Repetitive Peak Reverse Voltage
Power Dissipation
Non-Repetitive Peak Forward Surge Current 1
Thermal Resistance (Junction to Ambient) 500(Note 2)
(Note 1)
-55 to +150
Notes : 1. Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) pulse width = 1 μsec
MIN MAX
Junction and Storage Temperature Range
PARAMETER
Reverse Breakdown Voltage 250 -
Forward Voltage
-1.00
V
-1.25
Reverse Leakage Current -0.1
V
F
Junction Capacitance -5
Reverse Recovery Time -50
I
F
= I
R
= 30mA , R
L
= 100 , I
RR
= 1mA
V
R
= 1 V , f = 1.0 MHz
V
R
= 200 V
I
F
= 200 mA
I
F
= 100 mA
I
R
= 100 μA
Small Signal Product
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1412039 Version: D14
BAS21 / A / C / S
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
0.01
0.1
1
10
100
0 40 80 120 160 200
Reverse Current (μA)
T
j
, Junction Temperature (
o
C)
Fig. 2 Reverse Current VS. Junction temperature
V
R
=200V
0.01
0.1
1
10
100
1000
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1
Instantaneous Forward Current (mA)
Instantaneous Forward Voltage (V)
Fig. 1 Typical Forward Characteristics
0
50
100
150
200
250
0 25 50 75 100 125 150 175 200
Power Dissipation (mW)
Ambient Temperature (
o
C)
Fig. 3 Admissible Power Dissipation Curve
ORDERING INFORMATION
PART NO.
Note 1: "xx" is Device Code "1" thru "1S"
Note 2: Part No. Suffix „-xx “ would be used for special requirement
PART NO.
PACKAGE OUTLINE DIMENSIONS
Min Max Min Max
A 2.70 3.10 0.106 0.122
B 1.10 1.50 0.043 0.059
C 0.30 0.51 0.012 0.020
D 1.78 2.04 0.070 0.080
E 2.10 2.64 0.083 0.104
F 0.89 1.30 0.035 0.051
G
H
SUGGEST PAD LAYOUT
Z
X
Y
C
E
Document Number: DS_S1412039 Version: D14
BAS21 / A / C / S
Taiwan Semiconductor
Small Signal Product
PART NO.
SUFFIX (Note 2)
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE PACKING
BAS2xx
(Note 1)
-xx
RF
GSOT-23
3K / 7" Reel
R5 10K / 13" Reel
EXAMPLE
PREFERRED P/N
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
BAS21 RF BAS21 RF
Multiple manufacture
source
BAS21 RFG BAS21 RF G
Multiple manufacture
source
Green compound
BAS21-B0 RFG BAS21 -B0 RF G
Defined manufacture
source
Green compound
2.8 0.110
DIM.
Unit (mm) Unit (inch)
0.55 REF 0.022 REF
0.10 REF 0.004 REF
0.028
0.9 0.035
1.9 0.075
DIM.
Unit (mm) Unit (inch)
Typ. Typ.
1.0 0.039
BAS21-D0 RFG BAS21 -D0 RF G
Defined manufacture
source
Green compound
0.7

BAS21A RFG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Diodes - General Purpose, Power, Switching Switching diode 225mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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