STW34NB20 Datasheet PTZTE2511A, STW34NB20 | P4-P6

STW34NB20

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Table 11. Source Drain Diode

Note: 1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Figure 3. Safe Operating Area Figure 4. Thermal Impedance

Figure 5. Output Characteristics Figure 6. Transfer Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Source-drain Current 34 A

SDM

(1)

Source-drain Current

(pulsed)

136 A

(2)

Forward On Voltage I

= 34 A; V

= 0 1.5 V

Reverse Recovery Time I

= 34 A; di/dt = 100 A/µs 290 ns

Reverse RecoveryCharge V

= 50 V; T

= 150 °C

(see test circuit, Figure 18)

2.7 µC

RRAM

Reverse RecoveryCharge 18.5 A

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STW34NB20

Figure 7. Transconductance Figure 8. Static Drain-source On Resistance

Figure 9. Gate Charge vs Gate-source Voltage Figure 10. Capacitance Variations

Figure 11. Normalized Gate Thresold Voltage

vs Temperature

Figure 12. Normalized On Resistance vs

Temperature

STW34NB20

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Figure 13. Source-drain Diode Forward

Characteristics

P1-P3 P4-P6 P7-P9 P10-P10

STW34NB20

Mfr. #:

Buy STW34NB20

Manufacturer:

STMicroelectronics

Description:

MOSFET N-CH 200V 34A TO-247

Lifecycle:

New from this manufacturer.

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STW34NB20

STW34NB20

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