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MTEDCAE008SAJ-1N2IT

P1-P3P4-P6P7-P9P10-P11
Figure 2: Pin Assignments: 2 x 5 Connector
Key GND USB USB Vcc
data data (+5V)
(+) (–)
NC NC NC NC NC
10 8 6 4 2
9 7 5 3 1
Top view (through PCB) Bottom view
Vcc USB USB GND Key
(+5V) data data
(–) (+)
NC NC NC NC NC
2 4 6 8 10
1 3 5 7 9
Note:
1. Diagram not to scale.
Table 4: Signal/Pin Descriptions
Symbol Type Function
USB data (+), USB data (–) I/O Data inputs/outputs: The bidirection-
al I/Os transfer address, data, and in-
struction information. Data is output
only during READ operations; at other
times the I/Os are inputs.
V
CC
Supply V
CC
power supply pin.
V
SS
Supply V
SS
ground connection
NC – No connect: NC pins are not internally
connected. These pins can be driven or
left floating.
Key – This pin is keyed.
Embedded USB Mass Storage Drive (e230)
General Description
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Error Management
The embedded USB incorporates advanced technology for defect and error manage-
ment. It uses various combinations of hardware-based error correction algorithms and
firmware-based wear-leveling algorithms.
Over the life of the drive, uncorrectable errors may occur. An uncorrectable error is de-
fined as data that is reported as successfully programmed to the drive, but when it is
read out of the drive, the data differs from what was programmed. See the Uncorrecta-
ble Bit Error Rate Table.
The mean time between failures (MTBF) can be predicted based on component reliabil-
ity data obtained by following the methods referenced in the Telecordia SR-332 reliabili-
ty prediction procedures for electronic equipment.
Table 5: System Reliability
Density MTFB (Operating Hours)
2–16GB >1 million device hours
Table 6: Uncorrectable Bit Error Rate
Uncorrectable Bit Error Rate (BER)
1
Operation
<1 bit error in 10
15
bits READ
Note:
1. BER is measured with a WRITE-to-READ ratio of 1:1.
Wear-Leveling Algorithm
The controller adds a built-in RAM register unit to record the erase count of each block.
Accordingly, the controller can decide the frequency of wear leveling and choose the
proper blocks to swap. This technique successfully averages the erase count of the data
blocks. Also, an enhanced wear leveling algorithm now includes most static blocks in
the recycling pool. Increasing the number of blocks makes the wear-leveling algorithm
more robust, and in turn extends product life.
Embedded USB Mass Storage Drive (e230)
Error Management
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Electrical Characteristics
Stresses greater than those listed may cause permanent damage to the drive. This is a
stress rating only, and functional operation of the drive at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Ex-
posure to absolute maximum rating conditions for extended periods may affect reliabil-
ity.
Table 7: Absolute Maximum Ratings
Parameter/Condition Symbol Min Max Unit
V
CC
supply voltage V
CC
–0.6 5.25 V
Table 8: DC and Operating Characteristics
Parameter/Condition Symbol Min Typ Max Unit Condition
Standby current Isb
– 60 70 mA V
CC
= 3V
– 50 60 mA V
CC
= 5V
Active current I
CC
1 – 100 120 mA V
CC
= 3V /5V
Table 9: Recommended Operating Conditions
Parameter/Condition Symbol Min Typ Max Unit
Operating temperature Commercial T
A
0 – 70 °C
Industrial –40 – 85 °C
V
CC
supply voltage 5V V
CC
4.75 5.00 5.25 V
3.3V V
CC
2.85 3.3 3.5 V
Ground supply voltage V
SS
0 0 0 V
Table 10: Shock and Vibration
Parameter/Condition Specification
Shock 1500g/0.5ms
Vibration 5–500Hz at 3.1G
Embedded USB Mass Storage Drive (e230)
Electrical Characteristics
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P11

MTEDCAE008SAJ-1N2IT

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Buy MTEDCAE008SAJ-1N2IT
Manufacturer:
Micron
Description:
Managed NAND SLC 8GB EUSBSSD TSOP
Lifecycle:
New from this manufacturer.
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