BDX53BFP

BDX53BFP

SILICON POWER DARLINGTON TRANSISTOR

APPLICATIONS:

■ GENERAL PURPOSE SWITCHING AND

AMPLIFIER

■ LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

■ FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

DESCRIPTION

The BDX53BFP is a silicon Epitaxial-Base NPN

power transistor in monolithic Darlington

configuration mounted in T0-220FP fully molded

isolated package. It is intented for use in hammer

drivers, audio amplifiers and other medium power

linear and switching applications.

INTERNAL SCHEMATIC DIAGRAM

February 2003

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage (I

E

= 0) 80 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) 80 V

V

EBO

Emitter-base Voltage (I

C

= 0) 5 V

I

C

Collector Current 8 A

I

CM

Collector Peak Current (repetitive) 12 A

I

B

Base Current 0.2 A

P

tot

Total Dissipation at T

c

≤ 25

o

C

29 W

V

isol

Insulation Withstand Voltage (RMS) from All

Three Leads to External Heatsink

1500 V

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

1

2

3

T0-220FP

R

1

Typ. = 10 KΩ R

2

Typ. = 150 Ω

®

1/4

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

4.3

70

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

Collector Cut-off

Current (I

E

= 0)

V

CB

= 80 V 0.2 mA

I

CEO

Collector Cut-off

Current (I

B

= 0)

V

CE

= 40 V 0.5 mA

I

EBO

Emitter Cut-off Current

(I

C

= 0)

V

EB

= 5 V

2mA

V

CEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(I

B

= 0)

I

C

= 100 mA 80 V

V

CE(sat)

∗ Collector-emitter

Saturation Voltage

I

C

= 3 A I

B

=12 mA 2 V

V

BE(sat)

∗ Base-emitter

Saturation Voltage

I

C

= 3 A I

B

=12 mA 2.5 V

h

FE

∗ DC Current Gain I

C

= 3 A V

CE

= 3 V 750

V

F

∗ Parallel Diode Forward

Voltage

I

F

= 3 A

I

F

= 8 A

1.8

2.5

2.5 V

V

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

BDX53BFP

2/4

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.7 0.045 0.067

F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630

L3 28.6 30.6 1.126 1.204

L4 9.8 10.6 0.385 0.417

L6 15.9 16.4 0.626 0.645

L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

L2

A

B

D

E

H

G

L6

¯

F

L3

G1

123

F2

F1

L7

L4

TO-220FP MECHANICAL DATA

BDX53BFP

3/4

BDX53BFP

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Darlington Transistors Silicon Pwr Trnsistr

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

BDX53BFP