CDBER70-HF
SMD Schottky Barrier Diode
Page 1
QW-G1006
REV:B
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Symbol
Typ
Parameter
Conditions Min
Max
Unit
Forward voltage
IF = 15mA
IF = 1mA
VF V
1
0.41
Reverse current
IR
uA
VR = 50V
Capacitance between terminals
Reverse recovery time
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
CT
Trr
pF
nS
5
2
0.1
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
IO
VR(RMS)
VR
VRM
Average forward rectified current
Reverse voltage
Peak reverse voltage
Symbol
Parameter
Conditions
Min
Max
Unit
RMS reverse voltage
mA
V
V
V
70
49
70
70
IFSM
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
A
0.1
PD
Power dissipation
mW
150
O
C
+125TSTG
Tj
Storage temperature
Junction temperature
O
C
+125
-65
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.030(0.75)
0.024(0.60)
Dimensions in inches and (millimeter)
0.022(0.55) Typ.
0.016(0.40) Typ.
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0503 standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BG
-Mounting position: Any
-Weight: 0.002 gram(approx.).
/SOD-723F
Comchip Technology CO., LTD.
Io = 70 mA
VR = 70 Volts
RoHS Device
Halogen Free
0503/SOD-723F
