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HMC8402-SX

P1-P3P4-P6P7-P9P10-P12P13-P15
HMC8402 Data Sheet
Rev. A | Page 4 of 15
26 GHz TO 30 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 7 V, I
DQ
= 74 mA.
Table 3.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 26 30 GHz
GAIN 11 13 dB
Gain Variation Over Temperature 0.009 dB/°C
RETURN LOSS
Input 10 dB
Output
10
dB
OUTPUT
Output Power for 1 dB Compression P1dB 15 19 dBm
Saturated Output Power P
SAT
20.5 dBm
Output Third-Order Intercept IP3 Measurement taken at P
OUT
/tone = 0 dBm 23 dBm
NOISE FIGURE NF 3.0 4.5 dB
SUPPLY CURRENT
Total Supply Current I
DQ
Nominal voltage (V
DD
) = 7 V 45 68 85 mA
Total Supply Current vs. V
DD
I
DQ
V
DD
= 5 V 62 mA
V
DD
= 6 V 65 mA
V
DD
= 7 V 68 mA
V
DD
= 8 V 72 mA
SUPPLY VOLTAGE V
DD
5 7 8 V
Data Sheet HMC8402
Rev. A | Page 5 of 15
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Drain Bias Voltage (V
DD
) 10 V
Gate Bias Voltage (V
GG
2)
−2.6 V to +3.6 V
RF Input Power (RFIN) 20 dBm
Channel Temperature 175°C
Continuous Power Dissipation (P
DISS
),
T
A
= 85°C (Derate 17.2 mW/°C Above 85°C)
1.55 W
Thermal Resistance, θ
JC
(Channel to
Bottom Die)
58°C/W
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −55°C to +85°C
ESD Sensitivity, Human Body Model (HBM) Class 1A (250 V)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
HMC8402 Data Sheet
Rev. A | Page 6 of 15
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pad Configuration
Table 5. Pad Function Descriptions
Pad No. Mnemonic Description
1 RFIN RF Input. This pad is ac-coupled and matched to 50 Ω. See Figure 3 for the interface schematic.
2 V
GG
2 Gain Control. This pad is dc-coupled and is used to accomplish gain control by bringing this voltage
lower and becoming more negative. See Figure 4 for the interface schematic.
3 V
DD
Power Supply Voltage for the Amplifier. Connect a dc bias to provide drain current (I
DQ
). See Figure 5 for
the interface schematic.
4 RFOUT RF Output. This pad is ac-coupled and matched to 50 Ω. See Figure 6 for the interface schematic.
Die Bottom GND Die bottom must be connected to RF/dc ground. See Figure 7 for the interface schematic.
INTERFACE SCHEMATICS
Figure 3. RFIN Interface Schematic
Figure 4. V
GG
2 Interface Schematic
Figure 5. V
DD
Interface Schematic
Figure 6. RFOUT Interface Schematic
Figure 7. GND Interface Schematic
ADI2014
HMC8402
3
2
1
4
13853-002
RFIN
13853-003
V
GG
2
13853-004
V
DD
13853-005
RFOUT
13853-006
GND
13853-007
P1-P3P4-P6P7-P9P10-P12P13-P15

HMC8402-SX

Mfr. #:
Buy HMC8402-SX
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier Die Sales- 2 die pack
Lifecycle:
New from this manufacturer.
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