IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60
V
DSS
I
D25
R
DS(on)
t
rr
IXFK/FN 36N60 600V 36A 0.18Ω 250ns
IXFK/FN 32N60 600V 32A 0.25Ω 250ns
Preliminary Data
Symbol Test Conditions Maximum Ratings
IXFK IXFN
V
DSS
T
J
= 25°C to 150°C 600 600 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 600 600 V
V
GS
Continuous ±20 ±20 V
V
GSM
Transient ±30 ±30 V
I
D25
T
C
= 25°C, Chip capability 32N60 32 32 A
36N60 36 36 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
32N60 128 128 A
36N60 144 144 A
I
AR
T
C
= 25°C2020A
E
AR
T
C
= 25°C3030mJ
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
5 5 V/ns
T
J
≤ 150°C, R
G
= 2 Ω
P
D
T
C
= 25°C 500 520 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in) from case for 10 s 300 - °C
V
ISOL
50/60 Hz, RMSt = 1 min - 2500 V~
I
ISOL
≤ 1 mAt = 1 s - 3000 V~
M
d
Mounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
Weight 10 30 g
Features
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL
94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
92807G (01/96)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA 600 V
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA 2 4.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±200 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C 400 µA
V
GS
= 0 V T
J
= 125°C2mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
36N60 0.18 Ω
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 32N60 0.25 Ω
TO-264 AA (IXFK)
S
G
D
D (TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
D
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
©1996 IXYS Corporation. All rights reserved.
