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NTHS5404T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 5
1 Publication Order Number:
NTHS5404T1/D
NTHS5404T1
Power MOSFET
20 V, 7.2 A, N−Channel ChipFETE
Features
• Low R
DS(on)
for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol 5 Secs
Steady
State
Unit
Drain−Source Voltage V
DS
20 V
Gate−Source Voltage V
GS
"12 V
Continuous Drain Current
(T
J
= 150°C) (Note 1)
T
A
= 25°C
T
A
= 85°C
I
D
7.2
5.2
5.2
3.8
A
Pulsed Drain Current I
DM
"20 A
Continuous Source Current
(Diode Conduction) (Note 1)
I
S
7.2 5.2 A
Maximum Power Dissipation
(Note 1)
T
A
= 25°C
T
A
= 85°C
P
D
2.5
1.3
1.3
0.7
W
Operating Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
Device Package Shipping
†
ORDERING INFORMATION
NTHS5404T1 ChipFET 3000/Tape & Reel
G
D
S
D
D
D
D
D
1
2
3
45
6
7
8
PIN
CONNECTIONS
G
D
S
N−Channel MOSFET
ChipFET
CASE 1206A
STYLE 1
MARKING
DIAGRAM
A2 M G
G
A2 = Specific Device Code
M = Month Code
G = Pb−Free Package
1
2
3
4
8
7
6
5
http://onsemi.com
20 V
25 mW @ 4.5 V
R
DS(on)
TYP
7.2 A
I
D
MAXV
(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTHS5404T1G ChipFET
(Pb−Free)
3000/Tape & Reel
(Note: Microdot may be in either location)
NTHS5404T1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Maximum Junction−to−Ambient (Note 2)
t v 5 sec
Steady State
R
q
JA
40
80
50
95
°C/W
Maximum Junction−to−Foot (Drain)
Steady State
R
q
JF
15 20 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
DYNAMIC (Note 4)
Total Gate Charge
Q
G
V
DS
= 10 V, V
GS
= 4.5 V,
I
D
= 5.2 A
12 18
nC
Gate−Source Charge Q
GS
2.4
Gate−Drain Charge Q
GD
3.2
Input Capacitance C
ISS
V
DS
= 16 V, V
GS
= 0 V,
f = 1.0 MHz
740
pF
Output Capacitance C
OSS
337
Reverse Transfer Capacitance C
RSS
88
Turn−On Delay Time t
d(on)
V
DD
= 10 V, R
L
= 10 W
I
D
^ 1.0 A, V
GEN
= 4.5 V,
R
G
= 6 W
8.0 15
ns
Rise Time t
r
7.0 15
Turn−Off Delay Time t
d(off)
50 60
Fall Time t
f
28 40
STATIC
Drain−to−Source Breakdown Voltage
(Note 3)
V
(BR)DSS
V
DS
= V
GS
, I
D
= 250 mA
20 25.1 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
18.4 mV/°C
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
0.6 V
Gate−Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "12 V "100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 16 V, V
GS
= 0 V 1.0 mA
V
DS
= 16 V, V
GS
= 0 V,
T
J
= 85°C
5.0
On−State Drain Current (Note 3) I
D(on)
V
DS
w 5.0 V, V
GS
= 4.5 V 20 A
Drain−Source On−State Resistance
(Note 3)
r
DS(on)
V
GS
= 4.5 V, I
D
= 5.2 A 0.025 0.030 W
V
GS
= 2.5 V, I
D
= 4.3 A 0.038 0.045
Forward Transconductance (Note 3) g
fs
V
DS
= 10 V, I
D
= 5.2 A 20 S
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 3) V
SD
V
GS
= 0 V, I
S
= 5.2 A 0.8 1.2 V
Reverse Recovery Time t
rr
V
GS
= 0 V, I
S
= 5.2 A,
di
S
/dt = 100 A/ms
20.9
ns
Charge Time t
a
10.2
Discharge Time t
b
10.6
Reverse Recovery Time Q
rr
11 nC
2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
NTHS5404T1
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
2 V
1.8 V
125°C
1.6 V
0
12
2.5
8
6
31.51
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
4
2
0
0.5
Figure 1. On−Region Characteristics
0
12
8
1.512
6
4
2
0.5
0
2.5
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
0.01
24
0.04
0.03
0
5
Figure 3. On−Resistance versus
Gate−to−Source Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
281074
0.038
3
0.030
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
V
GS
= 1.2 V
0.06
13
T
C
= −55°C
I
D
= 5.2 A
T
J
= 25°C
0.040
75 150
T
J
= 25°C
V
GS
= 2.5 V
I
D
= 5.2 A
V
GS
= 4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2
1.4 V
5 V
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.6
V
GS
= 6 V
V
GS
= 4.5 V
10
V
GS
= 2 V − 5 V
10
0.02
0.05
659
0.036
0.034
0.032
0.024
0.028
0.026
048
1E−06
1E−07
1E−08
16
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12 20
V
GS
= 0 V
I
DSS
, LEAKAGE (AMPS)
1E−05
T
J
= 150°C
T
J
= 100°C
P1-P3P4-P6

NTHS5404T1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 7.2A N-Channel
Lifecycle:
New from this manufacturer.
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