AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
v07.0713
General Description
Features
Functional Diagram
Gain: 24 dB
P1dB: +17.5 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.65 x 1.60 x 0.05 mm
Typical Applications
This HMC-AUH318 is ideal for:
• Short Haul / High Capacity Links
• Test & Measurement Equipment
• E-Band Communication Systems
The HMC-AUH318 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplier
which operates between 71 and 76 GHz. The HMC-
AUH318 provides 24 dB of gain, and an output
power of +17.5 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized. The HMC-AUH318 GaAs
HEMT MMIC Medium Power Amplier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
HMC-AUH318
Electrical Specications
[1]
, T
A
= +25° C, Vdd1 = Vdd2 = 4V, Idd1 = Idd2 = 80 mA
[2]
Parameter Min. Typ. Max. Units
Frequency Range 71 - 76 GHz
Gain 21 24 dB
Input Return Loss 7 dB
Output Return Loss 4 dB
Output power for 1 dB Compression (P1dB) 17.5 dBm
Saturated Output Power (Psat) 20 dBm
Supply Current (Idd1+Idd2) 160 mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA.
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