ES1AE
THRU
ES1ME
1 Amp Ultra Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
Features
Maximum Ratings
x Operating Temperature: -50qC to +150qC
x Storage Temperature: -50qC to +150qC
x Maximum Thermal Resistance; 15qC/W Junction To Lead
MCC
Part
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
ES1AE ES1A 50V 35V 50V
ES1BE ES1B 100V 70V 100V
ES1CE ES1C 150V 105V 150V
ES1DE ES1D 200V 140V 200V
ES1GE ES1G 400V 280V 400V
ES1JE ES1J 600V 420V 600V
ES1KE ES1K 800V 560V 800V
ES1ME ES1M 1000V 700V 1000V
Electrical Characteristics @ 25qC Unless Otherwise Specified
Average Forward
Current
I
F(AV)
1.0A
T
J
= 75qC
Peak Forward Surge
Current
I
FSM
30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
ES1AE-DE
ES1GE-JE
ES1KE~ME
V
F
.975V
1.35V
1.70V
I
FM
= 1.0A;
T
J
= 25qC*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
5PA
100PA
T
J
= 25qC
T
J
= 100qC
Maximum Reverse
Recovery Time
ES1AE-DE
ES1GE-KE
ES1ME
T
rr
50ns
75ns
100ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Typical Junction
Capacitance
C
J
45pF Measured at
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 200 Psec, Duty cycle 2%
omponents
20736 Marilla Street Chatsworth
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Revision: C 2015/10/19
DO-214AC
(SMAE)
0.070”
0.090”
0.085”
SUGGESTED SOLDER
PAD LAY
T
H
E
G
B
D
Cathode Band
www.mccsemi.com
1 of 4
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .079 .096 2.01 2.44
B.045.0711.151.80
C .002 .008 .05 .20
D --- .02 --- .51
E .030 .060 .76 1.52
G .189 .208 4.80 5.30
H .157 .180 4.00 4.57
J .090 .115 2.29 2.92
• Lead Free Finish/Rohs Compliant (Note1)
("P"Suffix designates
Compliant. See ordering information)
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.
• Moisture Sensitivity Level 1
• Epoxy meets UL 94 V-0 flammability rating
x High Temp Soldering: 260qC for 10 Seconds At Terminals
x Superfast Recovery Times For High Efficiency
• Halogen free available upon request by adding suffix "-HF"
Micro Commercial Components
M C C
TM
