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SQ3457EV-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQ3457EV
www.vishay.com
Vishay Siliconix
S11-2124-Rev. B, 07-Nov-11
1
Document Number: 66715
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) - 30
R
DS(on)
() at V
GS
= 10 V 0.065
R
DS(on)
() at V
GS
= 4.5 V 0.100
I
D
(A) - 6.8
Configuration Single
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
TSOP-6
Top V iew
6
4
1
2
3
5
2.85 mm
3 mm
Marking Code: 8Ixxx
ORDERING INFORMATION
Package TSOP-6
Lead (Pb)-free and Halogen-free SQ3457EV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
- 6.8
A
T
C
= 125 °C - 3.9
Continuous Source Current (Diode Conduction)
a
I
S
- 6.3
Pulsed Drain Current
b
I
DM
- 27
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 14
Single Pulse Avalanche Energy E
AS
10 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
5
W
T
C
= 125 °C 1.7
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
110
°C/W
Junction-to-Foot (Drain) R
thJF
30
SQ3457EV
www.vishay.com
Vishay Siliconix
S11-2124-Rev. B, 07-Nov-11
2
Document Number: 66715
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= - 250 μA - 30 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= - 30 V - - - 1
μA V
GS
= 0 V V
DS
= - 30 V, T
J
= 125 °C - - - 50
V
GS
= 0 V V
DS
= - 30 V, T
J
= 175 °C - - - 150
On-State Drain Current
a
I
D(on)
V
GS
= - 10 V V
DS
5 V - 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V I
D
= - 6 A - 0.035 0.065
V
GS
= - 4.5 V I
D
= - 4.9 A - 0.072 0.100
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 5 A - 9 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= - 15 V, f = 1 MHz
- 565 705
pF Output Capacitance C
oss
- 140 180
Reverse Transfer Capacitance C
rss
- 98 120
Total Gate Charge
c
Q
g
V
GS
= - 10 V V
DS
= - 15 V, I
D
= - 5 A
-1421
nC Gate-Source Charge
c
Q
gs
-2.13
Gate-Drain Charge
c
Q
gd
-35
Gate Resistance R
g
f = 1 MHz 2 6.5 11
Turn-On Delay Time
c
t
d(on)
V
DD
= - 15 V, R
L
= 3
I
D
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
-69
ns
Rise Time
c
t
r
-914
Turn-Off Delay Time
c
t
d(off)
-1827
Fall Time
c
t
f
-69
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--- 27A
Forward Voltage V
SD
I
F
= - 1.6 A, V
GS
= 0 - - 0.8 - 1.1 V
SQ3457EV
www.vishay.com
Vishay Siliconix
S11-2124-Rev. B, 07-Nov-11
3
Document Number: 66715
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
8
12
16
20
012345
V
GS
= 10 V thru 6 V
V
GS
=4V
V
GS
=5V
V
GS
=3V
V
GS
=2V,1V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
3
6
9
12
15
0.0 1.6 3.2 4.8 6.4 8.0
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
C
rss
0
200
400
600
800
1000
0102030
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
4
8
12
16
20
0246810
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
0.04
0.08
0.12
0.16
0.20
048121620
V
GS
=10V
V
GS
=4.5V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
0
2
4
6
8
10
03691215
I
D
=5A
V
DS
=15V
P1-P3P4-P6P7-P9P10-P11

SQ3457EV-T1_GE3

Mfr. #:
Buy SQ3457EV-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Channel 30V AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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