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NRVHP8H200MFDWFT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2017
February, 2018 − Rev. 0
1 Publication Order Number:
NRVHP8H200MFD/D
NRVHP8H200MFD
Switch-Mode
Power Rectifier
This ultrafast rectifier in the dual flag SO−8 flat lead package offers
designers a unique degree of versatility and design freedom. The two
devices are electrically independent and can be used separately, as
common cathode, as common anode or in series as a function of board
level layout. The exposed pad design provides low thermal resistance.
The clip attach design creates a package with very efficient die size to
board area ratio. While thermal performance is nearly the same as the
DPAK package height and board footprint are less than half.
Features
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
Applications
• Excellent Alternative to DPAK in Space−Constrained Automotive
Applications
• Output Rectification in Switching Power Supplies
• Freewheeling Diode used with Inductive Loads
Device Package Shipping†
ORDERING INFORMATION
ULTRAFAST RECTIFIER
8 AMPERES (4x2), 200 VOLTS
www.onsemi.com
1,2
7,8
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NRVHP8H200MFDT1G DFN8
(Pb−Free)
1500 /
Tape & Ree
l
NRVHP8H200MFDT3G DFN8
(Pb−Free)
5000 /
Tape & Ree
l
3,4
5,6
DFN8 5x6
(SO8FL)
CASE 506BT
MARKING DIAGRAM
8H200M = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
C1
C1
C2
C2
A1
A1
A2
A2
8H200M
AYWZZ
1
C2
C1
C2
C1
NRVHP8H200MFDWFT1G DFN8
(Pb−Free)
1500 /
Tape & Ree
l
NRVHP8H200MFDWFT3G DFN8
(Pb−Free)
5000 /
Tape & Ree
l
NRVHP8H200MFD
www.onsemi.com
2
MAXIMUM RATINGS (per diode unless noted)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 170°C)
I
F(AV)
4.0 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 169°C)
I
FRM
8.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
80 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) E
AS
10 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (per diode unless noted)
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
− 3.4 °C/W
ELECTRICAL CHARACTERISTICS (per diode unless noted)
Instantaneous Forward Voltage (Note 1)
(i
F
= 4.0 Amps, T
J
= 125°C)
(i
F
= 4.0 Amps, T
J
= 25°C)
(i
F
= 6.0 Amps, T
J
= 125°C)
(i
F
= 6.0 Amps, T
J
= 25°C)
(i
F
= 8.0 Amps, T
J
= 125°C)
(i
F
= 8.0 Amps, T
J
= 25°C)
v
F
0.76
0.88
0.80
0.92
0.94
0.83
0.85
1.0
0.88
1.05
1.1
0.91
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
1.00
0.012
50
0.5
mA
Reverse Recovery Time
I
F
= 4.0 A, V
R
= 30 V, dl/dt = 200 A/ms, T
J
= 25°C
t
rr
17 30 ns
Reverse Recovery Time
I
F
= 4.0 A, V
R
= 30 V, dl/dt = 200 A/ms, T
J
= 50°C
t
rr
20 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
NRVHP8H200MFD
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.21.00.80.60.40.2
1
10
100
1.20.80.60.2
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
180120100806040200
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
0
1
100
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
1.4
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
140 200
1.E−09
1.E−08
1.E−06
1.E−05
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
T
A
= 175°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 85°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
Figure 6. Current Derating per Device
T
C
, CASE TEMPERATURE (°C)
10080 120600
0
1
2
4
5
6
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Square Wave
DC
R
q
JC
= 3.4°C/W
T
J
= 25°C
0.4 1.0
T
A
= 150°C
T
A
= 175°C
T
A
= 175°C
0.1
0.1
T
A
= 85°C
1.E−07
1.E−04
160
60 120 180
3
140
T
A
= 85°C
T
A
= 25°C
180120100806040200 140 200
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= 175°C
T
A
= 85°C
160
7
160 180
1.10.90.70.50.3 1.30.90.70.3 1.50.5 1.1 1.6
1.E−03
1.E−10
1.E−09
1.E−08
1.E−06
1.E−05
1.E−07
1.E−04
1.E−03
1.E−02
20020 80 14040 100 160
10
T
A
= −55°C
T
A
= −55°C
20 40
P1-P3P4-P5

NRVHP8H200MFDWFT3G

Mfr. #:
Buy NRVHP8H200MFDWFT3G
Manufacturer:
ON Semiconductor
Description:
Rectifiers PUF 4A 200V IN SO-8FL DUAL DFN-8
Lifecycle:
New from this manufacturer.
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