Characteristics STPS6045C
2/9 DocID4606 Rev 8
Characteristics
When the diodes 1 and 2 are simultaneously:
∆ T
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
RMS forward current 60 A
I
F(AV)
Average forward current
δ
= 0.5
Tc = 150 °C per diode 30 A
I
FSM
Surge non repetitive
forward current
tp = 10 ms sinusoidal 400 A
I
RRM
Repetive peak reverse
current
tp = 2 µs square
F = 1 kHz
1A
I
RSM
Non repetitive peak reverse
current
tp = 100 µs square 3 A
P
ARM
Repetitive peak avalanche
power
tp = 1 µs
T
j
= 25 °C
10600 W
T
stg
Storage temperature range - 65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
dV/dt Critical rate of rise or reverse voltage 10000 V/µs
Table 3. thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
0.95
0.55
°C/W
R
th(c)
Coupling 0.15
dPtot
dTj
---------------
1
Rth j a–
--------------------------
