SP8M3
Transistors
Rev.A 1/5
Switching
SP8M3
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
SOP8
Each lead has same dimensions
5.0±0.2
0.2±0.1
6.0±0.3
3.9±0.15
0.5±0.1
(
1
)
(
4
)
(
8
)
(
5
)
Max.1.75
1.27
0.15
0.4±0.1
1.5±0.1
0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
V
DSS
Symbol
30
V
V
GSS
20
A
I
D
±5.0
A
I
DP
±20
A
I
S
1.6
A
I
SP
20
W
P
D
2
°C
Tch
150
°C
Tstg
−55 to +150
Nchannel
−30
−20
±4.5
±18
−1.6
−18
Pchannel
Limits
Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
∗1
∗1
∗2
zEquivalent circuit
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
∗2
∗1
(8) (7)
(1) (2)
∗2
∗1
(6) (5)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-a) 62.5
Parameter
Symbol Limits Unit
Channel to ambient
∗
∗MOUNTED ON A CERAMIC BOARD.