IRFPS3810PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.009 Ω V
GS
= 10V, I
D
= 100A
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V V
DS
= 10V, I
D
= 250µA
g
fs
Forward Transconductance 52 ––– ––– S V
DS
= 50V, I
D
= 100A
––– ––– 25
µA
V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 30V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -30V
Q
g
Total Gate Charge ––– 260 390 I
D
= 100A
Q
gs
Gate-to-Source Charge ––– 49 74 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 160 250 V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 24 ––– V
DD
= 50V
t
r
Rise Time ––– 270 ––– I
D
= 100A
t
d(off)
Turn-Off Delay Time ––– 45 ––– R
G
= 1.03Ω
t
f
Fall Time ––– 140 ––– V
GS
= 10V
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 6790 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 2470 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 990 ––– ƒ = 1.0MHz, See Fig. 5
C
oss
Output Capacitance ––– 10740 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1180 ––– V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 2210 ––– V
GS
= 0V, V
DS
= 0V to 80V
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
5.0
13
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
≤ 100A, di/dt ≤ 350A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
Starting T
J
= 25°C, L = 0.27mH
R
G
= 25Ω, I
AS
= 100A. (See Figure 12)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 100A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 220 330 ns T
J
= 25°C, I
F
= 100A
Q
rr
Reverse RecoveryCharge ––– 1640 2460 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
170
670
A
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.
