December 2009 Doc ID 10757 Rev 4 1/10
10
STTH2R06
High efficiency ultrafast diode
Features
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH2R06 uses ST Turbo 2 600 V planar Pt
doping technology. It is specially suited for
switching mode base drive and transistor circuits.
Packaged in axial, SMA, SMB and SMC, this
device is intended for use in high frequency
inverters, free wheeling and polarity protection.
Table 1. Device summary
Symbol Value
I
F(AV)
2 A
V
RRM
600 V
T
j
175 °C
V
F
(typ) 1.0 V
t
rr
(typ) 35 ns
KA
DO-41
STTH2R06
SMA
STTH2R06A
SMB
STTH2R06U
SMC
STTH2R06S
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