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STTH2R06S

P1-P3P4-P6P7-P9P10-P10
December 2009 Doc ID 10757 Rev 4 1/10
10
STTH2R06
High efficiency ultrafast diode
Features
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH2R06 uses ST Turbo 2 600 V planar Pt
doping technology. It is specially suited for
switching mode base drive and transistor circuits.
Packaged in axial, SMA, SMB and SMC, this
device is intended for use in high frequency
inverters, free wheeling and polarity protection.
Table 1. Device summary
Symbol Value
I
F(AV)
2 A
V
RRM
600 V
T
j
175 °C
V
F
(typ) 1.0 V
t
rr
(typ) 35 ns
KA
DO-41
STTH2R06
SMA
STTH2R06A
SMB
STTH2R06U
SMC
STTH2R06S
www.st.com
Characteristics STTH2R06
2/10 Doc ID 10757 Rev 4
1 Characteristics
To evaluate the maximum conduction losses use the following equation:
P = 1 x I
F(AV)
+ 0.125 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
Forward rms current 7 A
I
F(AV)
Average forward current δ = 0.5
DO-41 T
L
= 70 °C
2A
SMA T
L
= 85 °C
SMB T
L
= 100 °C
SMC T
L
= 115 °C
I
FSM
Surge non repetitive forward current
DO-41
t
p
= 10ms
sinusoidal
40
A
SMA / SMB /
SMC
30
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature range -40 to + 175 °C
Table 3. Thermal resistance
Symbol Parameter Maximum Unit
R
th(j-l)
Junction to lead
DO-41 L = 5 mm 35
°C/W
SMA 30
SMB 25
SMC 20
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
--2
µA
T
j
= 150 °C - 12 85
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
--1.7
V
T
j
= 150 °C - 1.0 1.25
STTH2R06 Characteristics
Doc ID 10757 Rev 4 3/10
Table 5. Dynamic electrical characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 0.5 A, I
rr
= 0.25 A,
I
R
= 1 A
--30
ns
I
F
= 1 A,
dI
F
/dt = -50 A/µs
V
R
= 30 V
-3550
t
fr
Forward recovery time
T
j
= 25 °C
I
F
= 2 A,
dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
--100ns
V
FP
Forward recovery voltage - - 10 V
Figure 1. Conduction losses versus average
forward current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.5 1.0 1.5 2.0 2.5
P(W)
I (A)
F(AV)
T
δ
=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 1
δ = 0.5
0
1
2
3
4
5
6
7
8
9
10
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
I (A)
FM
V (V)
FM
T =150°C
(typical values)
j
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/R
th(j-a) th(j-a)
Single pulse
t (s)
p
SMA
DO-41
SMC
SMB
SMA/SMB/SMC: S = 1cm
CU
2
0
1
2
3
4
5
6
7
8
9
0 50 100 150 200 250 300 350 400 450 500
I (A)
RM
dI /dt(A/µs)
F
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
P1-P3P4-P6P7-P9P10-P10

STTH2R06S

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Manufacturer:
STMicroelectronics
Description:
Rectifiers RECTIFIER
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