MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CLA060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2005
ParameterSymbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
Tstg
Viso
Ratings
V
CC(PROT)
400
500
–40 ~ +125
2500
Unit
V
°C
V
rms
V
V
D = 13.5 ~ 16.5V, Inverter Part,
T
j = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2.1
2.0
3.3
2.4
0.4
1.0
2.5
1.0
1
10
Min. Typ. Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–I
C = 50A, VD = 15V, VCIN = 15V (Fig. 2)
T
j = 25°C
T
j = 125°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
ParameterSymbol
Condition
V
CE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
—
—
0.5
—
—
—
—
—
—
1.6
1.5
2.2
1.0
0.2
0.4
1.2
0.5
—
—
T
j = 25°C
T
j = 125°C
FWDi Forward Voltage
Switching Time
V
D = 15V, VCIN = 0V↔15V
V
CC = 300V, IC = 50A
T
j = 125°C
Inductive Load (Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D = 15V, IC = 50A
V
CIN = 0V (Fig. 1)
TOTAL SYSTEM
V
mA
V
µs
Unit
0.95*
1.61*
0.038
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT (per 1 element) (Note-1)
Inverter FWDi (per 1 element) (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
* If you use this value, R
th(f-a) should be measured just under the chips.
(Note-1) Tc (under the chip) measurement point is below.
Parameter
Limits
Typ. Max.
UP
IGBT
29.0
–7.3
VP WP UN VN WN
FWDi
29.5
1.6
IGBT
64.6
–7.3
FWDi
65.1
2.1
IGBT
85.9
–7.3
FWDi
86.4
2.1
IGBT
38.1
5.3
FWDi
37.6
–4.6
IGBT
54.8
5.3
FWDi
55.3
–4.6
IGBT
76.1
5.3
FWDi
75.6
–4.6
arm
axis
X
Y
(unit : mm)
Bottom view
