BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 04-Nov-15
1
Document Number: 86051
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLCIATIONS
• Rectification, general purpose
949588
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYW82 or BYW83 or BYW84 and BYW86 BYW86-TR 2500 per 10" tape and reel 12 500
BYW82 or BYW84 and BYW85 BYW85-TAP 2500 per ammopack 12 500
BYW85 BYW85TR 2500 per 10" tape and reel 12 500
BYW83 or BYW86 BYW86TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYW82 V
R
= 200 V, I
F(AV)
= 3 A SOD-64
BYW83 V
R
= 400 V, I
F(AV)
= 3 A SOD-64
BYW84 V
R
= 600 V, I
F(AV)
= 3 A SOD-64
BYW85 V
R
= 800 V, I
F(AV)
= 3 A SOD-64
BYW86 V
R
= 1000 V, I
F(AV)
= 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYW82 V
R
= V
RRM
200 V
BYW83 V
R
= V
RRM
400 V
BYW84 V
R
= V
RRM
600 V
BYW85 V
R
= V
RRM
800 V
BYW86 V
R
= V
RRM
1000 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
100 A
Repetitive peak forward current I
FRM
18 A
Average forward current I
F(AV)
3A
Pulse avalanche peak power t
p
= 20 μs, half sine wave, T
j
= 175 °C P
R
1000 W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
j
= 175 °C E
R
20 mJ
i
2
t-rating i
2
t40A2s
Junction and storage temperature range T
j
= T
stg
-55 to +175 °C
