T1235H
4/8
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 11: Leakage current versus junction
temperature for different values of blocking
voltage (typical values)
Figure 12: Acceptable repetitive peak off-state
voltage versus case-ambient thermal resistance
0.01 0.10 1.00 10.00
100
1000
2000
I (A), I t (A s)
TSM
22
t (ms)
p
T initial=25°C
j
dI/dt limitation:
50A/µs
I
TSM
I t
2
-40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I,I[T] /
GT H L j
I ,I ,I [T =25°C]
GT H L j
I
GT
I
H
& I
L
0.1 1.0 10.0 100.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
(dI/dt)c [T ] / ]
j
(dI/dt)c [T = 150°C
j
T (°C)
j
50 75 100 125 150
1E-3
1E-2
1E-1
1E+0
1E+1
I/ I(mA)
DRM RRM
T (°C)
j
V = V = 200V
DR
V = V = 400V
DR
V = V = 600V
DR
0 2 4 6 8 10 12 14 16 18 20
0
100
200
300
400
500
600
700
V/V(V)
DRM RRM
R (°C/W)
th(c-a)
T = 150°C
R = 1.2°C/W
j
th(j-c)
