IXA60IF1200NA
600 700 800 900 1000 1100 1200 1300
2
4
6
8
10
12
14
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
120
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
=600 V
30 A
60 A
120 A
Fig. 7 Typ. Forward current versus V
F
Fig. 8 Typ. reverse recov.charge Q
rr
vs. di/dt
600 700 800 900 1000 1100 1200 1300
0
10
20
30
40
50
60
70
80
90
I
RR
[A]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
=600 V
120 A
30 A
60 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
600 700 800 900 1000 1100 1200 1300
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
120 A
30 A
60 A
T
VJ
=125°C
V
R
= 600 V
Fig. 10 Typ. recovery time t
rr
versus di/dt
Fig. 11 Typ. recovery energy E
rec
versus di/dt
600 700 800 900 1000 1100 1200 1300
0.0
0.8
1.6
2.4
3.2
4.0
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
= 125°C
V
R
= 600 V
120 A
30 A
60 A
0.001 0.01 0.1 1 10
0.01
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transient thermal impedance
IGBT
Diode
Diode
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20140708aData according to IEC 60747and per semiconductor unless otherwise specified
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