BSS314PEH6327XTSA1

P1-P3 P4-P6 P7-P9

BSS314PE

OptiMOS™-P 3 Small-Signal-Transistor

Features

• P-channel

• Enhancement mode

• Logic level (4.5V rated)

• ESD protected

• Qualified according AEC Q101

• 100% Lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

A

=25 °C

-1.5 A

T

A

=70 °C

-1.2

Pulsed drain current

I

D,pulse

T

A

=25 °C

-6.1

Avalanche energy, single pulse

E

AS

I

D

=-1.5 A, R

GS

=25 W

6 mJ

Reverse diode dv/dt dv /dt

I

D

=-1.5 A,

V

DS

=-16 V,

di/dt =-200A/µs,

T

j,max

=150 °C

6 kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

1)

P

tot

T

A

=25 °C

W

Operating and storage temperature

T

j

, T

stg

-55 ... 150 °C

ESD Class

JESD22-A114 -HBM 1000V to 2000V

Soldering Temperature 260 °C °C

IEC climatic category; DIN IEC 68-1 55/150/56 °C

Value

0.5

PG-SOT-23

3

1

2

V

DS

30

V

R

DS(on),max

V

GS

=-10 V

140

mW

V

GS

=-4.5 V

230

I

D

-1.5

A

Product Summary

Type

Package

Tape and Reel Information

Marking

Lead Free

Packing

BSS314PE

PG-SOT23

H6327: 3000 pcs/ reel

YGs

Yes

Non dry

3

1

2

Rev 2.3

page 1

2012-10-19

BSS314PE

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance,

junction - ambient

R

thJA

minimal footprint

1)

- - 250 K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

= 0V, I

D

=-250µA

-30 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=-6.3µA

-1 -1.5 -2

Drain-source leakage current

I

DSS

V

DS

=-30V, V

GS

=0 V,

T

j

=25 °C

- - -1

mA

V

DS

=-30V, V

GS

=0V,

T

j

=150 °C

- - -100

Gate-source leakage current

I

GSS

V

GS

=-20V, V

DS

=0V

- - -5

μA

Drain-source on-state resistance

R

DS(on)

V

GS

=-4.5V,

I

D

=-1.2A

- 153 230

mW

V

GS

=-10V, I

D

=-1.5A

- 107 140

Transconductance

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=-1.2 A

3 - S

Values

1)

Performed on 40mm

2

FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB.

Rev 2.3

page 2

2012-10-19

BSS314PE

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 221 294 pF

Output capacitance

C

oss

- 126 168

Reverse transfer capacitance

C

rss

- 7 11

Turn-on delay time

t

d(on)

- 5.1 - ns

Rise time

t

r

- 3.9 -

Turn-off delay time

t

d(off)

- 12.4 -

Fall time

t

f

- 2.8 -

Gate Charge Characteristics

Gate to source charge

Q

gs

- -0.7 - nC

Gate to drain charge

Q

gd

- -0.3 -

Gate charge total

Q

g

- -2.9 -

Gate plateau voltage

V

plateau

- -3.2 - V

Reverse Diode

Diode continous forward current

I

S

- - -0.5 A

Diode pulse current

I

S,pulse

- - -6.1

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=-1.5A,

T

j

=25 °C

- 0.8 1.1 V

Reverse recovery time

t

rr

- 12.5 - ns

Reverse recovery charge

Q

rr

- 4.3 - nC

V

R

=-15 V, I

F

=-1.5A,

di

F

/dt=100 A/µs

T

A

=25 °C

Values

V

GS

=0 V, V

DS

=-15 V,

f=1 MHz

V

DD

=-15V,

V

GS

=-10 V,

I

D

=-1.5 A, R

G

=6 W

V

DD

=-15V,

I

D

=-1.5A,

V

GS

=0 to -10 V

Rev 2.3

page 3

2012-10-19

P1-P3 P4-P6 P7-P9

BSS314PEH6327XTSA1

Mfr. #:

Buy BSS314PEH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET P-Ch -30V -1.5A SOT-23-3

Lifecycle:

New from this manufacturer.

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BSS314PEH6327XTSA1