3 www.fairchildsemi.com
74ABT16952
Absolute Maximum Ratings(Note 1) Recommended Operating
Conditions
Note 1: Absolute maximum ratings are values beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Note 3: For 8-bit toggling, I
CCD
<1.4 mA/MHz.
Note 4: Guaranteed, but not tested.
Storage Temperature −65°C to +150°C
Ambient Temperature under Bias
−55°C to +125°C
Junction Temperature under Bias
−55°C to +150°C
V
CC
Pin Potential to Ground Pin −0.5V to +7.0V
Input Voltage (Note 2)
−0.5V to +7.0V
Input Current (Note 2)
−30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disable or Power-Off State
−0.5V to +5.5V
in the HIGH State
−0.5V to V
CC
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
DC Latchup Source Current
−500 mA
Over Voltage Latchup (I/O) 10V
Free Air Ambient Temperature
−40°C to +85°C
Supply Voltage
+4.5V to +5.5V
Minimum Input Edge Rate (
∆V/∆t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
Clock Input 100 mV/ns
Symbol Parameter Min Typ Max Units
V
CC
Conditions
V
IH
Input HIGH Voltage 2.0 V Recognized HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized LOW Signal
V
CD
Input Clamp Diode Voltage −1.2 V Min I
IN
= −18 mA (Non I/O Pins)
V
OH
Output HIGH Voltage 2.5
VMin
I
OH
= −3 mA (A
n
, B
n
)
2.0 I
OH
= −32 mA (A
n
, B
n
)
V
OL
Output LOW Voltage 0.55 V Min I
OL
= 64 mA (A
n
, B
n
)
V
ID
Input Leakage Test
4.75 V 0.0
I
ID
= 1.9 µA (Non-I/O Pins)
All Other Pins Grounded
I
IH
Input HIGH Current 1
µA Max
V
IN
= 2.7V (Non-I/O Pins) (Note 4)
1V
IN
= V
CC
(Non-I/O Pins)
I
BVI
Input HIGH Current Breakdown Test 7 µA MaxV
IN
= 7.0V (Non-I/O Pins)
I
BVIT
Input HIGH Current Breakdown Test (I/O) 100 µA MaxV
IN
= 5.5V (A
n
, B
n
)
I
IL
Input LOW Current −1
µA Max
V
IN
= 0.5V (Non-I/O Pins) (Note 4)
−1V
IN
= 0.0V (Non-I/O Pins)
I
IH
+ I
OZH
Output Leakage Current 10 µA 0V–5.5V V
OUT
= 2.7V (A
n
, B
n
);
OEA
or OEB = 2.0V
I
IL
+ I
OZL
Output Leakage Current −10 µA 0V–5.5V V
OUT
= 0.5V (A
n
, B
n
);
OEA
or OEB = 2.0V
I
OS
Output Short-Circuit Current −100 −275 mA Max V
OUT
= 0V (A
n
, B
n
)
I
CEX
Output HIGH Leakage Current 50 µA MaxV
OUT
= V
CC
(A
n
, B
n
)
I
ZZ
Bus Drainage Test 100 µA 0.0V V
OUT
= 5.5V (A
n
, B
n
);
All Others GND
I
CCH
Power Supply Current 1.0 mA Max All Outputs HIGH
I
CCL
Power Supply Current 60 mA Max All Outputs LOW
I
CCZ
Power Supply Current 1.0 mA Max Outputs 3-STATE;
All Others GND
I
CCT
Additional I
CC
/Input 2.5 mA Max V
I
= V
CC
− 2.1V; All Others
at V
CC
or GND
I
CCD
Dynamic I
CC
No Load mA/
Max
Outputs OPEN
(Note 4) 0.18 MHz OEA or OEB = GND,
Non-I/O = GND or V
CC
One Bit toggling, 50% duty cycle
(Note 3)