BGA6289_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 3 of 12
NXP Semiconductors
BGA6289
MMIC wideband medium power amplifier
5. Limiting values
[1] T
sp
is the temperature at the solder point of ground lead, pin 2.
6. Thermal characteristics
[1] T
sp
is the temperature at the solder point of ground lead, pin 2.
7. Characteristics
[1] V
S
= DC operating supply voltage applied to R
bias
; see Figure 10
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
D
DC device voltage on pin 1; RF input AC coupled - 6.0 V
I
S
DC supply current - 150 mA
P
tot
total power dissipation T
sp
≤ 70 °C
[1]
- 800 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
P
D
drive power - 15 dBm
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point T
sp
≤ 70 °C
[1]
100 K/W
Table 7. Static characteristics
V
S
=8V; T
j
=25
°
C; R
bias
=47
Ω
[1]
Symbol Parameter Conditions Min Typ Max Unit
V
D
DC device voltage on pin 1; I
S
=88mA - 4.1 - V
I
S
DC supply current 79 88 96 mA
Table 8. Characteristics
V
S
= 8 V; I
S
= 88 mA; T
amb
=25
°
C; R
bias
= 47
Ω
; IP3
(out)
tone spacing = 1 MHz; P
L
= 0 dBm per
tone; Z
L
= Z
S
= 50
Ω;
unless otherwise specified; see Figure 10.
Symbol Parameter Conditions Min Typ Max Unit
|s
21
|
2
insertion power gain f = 850 MHz - 15 - dB
f = 1.95 GHz - 13 - dB
f = 2.5 GHz - 12 - dB
R
LIN
input return loss f = 850 MHz - 11 - dB
f = 1.95 GHz - 11 - dB
f = 2.5 GHz - 14 - dB
R
LOUT
output return loss f = 850 MHz - 11 - dB
f = 1.95 GHz - 14 - dB
f = 2.5 GHz - 14 - dB
