IXFB60N80P Datasheet IXFB60N80P | P1-P3

DS99560E(02/06)

PolarHV

TM

HiPerFET

Power MOSFET

V

DSS

= 800 V

I

D25

=60A

R

DS(on)

≤≤

≤ 140 m

ΩΩ

Ω

t

rr

≤≤

≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

l

International standard packages

l

Fast recovery diode

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

Advantages

l

Plus 264

TM

package for clip or spring

l

Space savings

l

High power density

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 3 mA 800 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8 mA 3.0 5.0 V

I

GSS

V

GS

= ±30 V

DC

, V

DS

= 0 ±200 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 3000 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

, Note 1 140 m Ω

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 800 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 800 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25° C60A

I

DM

T

C

= 25° C, pulse width limited by T

JM

150 A

I

AR

T

C

= 25° C30A

E

AR

T

C

= 25° C 100 mJ

E

AS

T

C

= 25° C5J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 20 V/ns

T

J

≤ 150° C, R

G

= 2 Ω

P

D

T

C

= 25° C 1250 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

F

C

Mounting force 30..120/7.5...2.7 N/lb

Weight 10 g

IXFB 60N80P

G = Gate D = Drain

S = Source TAB = Drain

PLUS264

TM

(IXFB)

(TAB)

G

D

S

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFB 60N80P

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, Note 1 35 67 S

C

iss

18 nF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 1200 pF

C

rss

44 pF

t

d(on)

36 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

=0.5 I

D25

29 ns

t

d(off)

R

G

= 1 Ω (External) 110 ns

t

f

26 ns

Q

g(on)

250 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

90 nC

Q

gd

78 nC

R

thJC

0.10 ° C/W

R

thCS

0.13 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 60 A

I

SM

Repetitive 150 A

V

SD

I

F

= I

S

, V

GS

= 0 V, Note 1 1.5 V

t

rr

I

F

= 25A, -di/dt = 100 A/µs 250 ns

Q

RM

V

R

= 100V 0.6 µC

I

RM

6.0 A

PLUS264

TM

(IXFB) Outline

Notes:

1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXFB 60N80P

Fig. 1. Output Characteristics

@ 25ºC

0

5

10

15

20

25

30

35

40

45

50

55

60

0123456789

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

0 3 6 9 12 15 18 21 24 27 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125ºC

0

5

10

15

20

25

30

35

40

45

50

55

60

0 2 4 6 8 10 12 14 16 18 20

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 30A Value

vs. Junction Temperature

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 60A

I

D

= 30A

Fig. 5. R

DS(on)

Normalized to I

D

= 30A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

0 20 40 60 80 100 120

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

-50-25 0 25 50 75100125150

T

J

- Degrees Centigrade

I

D

- Amperes

IXFB60N80P

IXFB60N80P

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