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BAT54HT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 7
1 Publication Order Number:
BAT54HT1/D
BAT54H
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
• Device Marking: JV
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Forward Current (DC) I
F
200
Max
mA
Non−Repetitive Peak Forward Current,
t
p
< 10 msec
I
FSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
I
FRM
300
mA
Thermal Resistance
Junction−to−Ambient
R
q
JA
635
°C/W
Junction and Storage Temperature Range T
J
, T
stg
−55
to150
°C
1. FR−4 Minimum Pad
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
30 VOLT SILICON
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
Device Package Shipping
†
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
www.onsemi.com
BAT54HT1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
JVM G
G
2
1
JV = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
NSVBAT54HT1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
BAT54H
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 μA)
V
(BR)R
30 − −
V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 7.6 10
pF
Reverse Leakage
(V
R
= 25 V)
I
R
− 0.5 2.0
μAdc
Forward Voltage
(I
F
= 0.1 mA)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 30 mA)
(I
F
= 100 mA)
V
F
−
−
−
−
−
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.50
0.80
V
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
t
rr
− − 5.0
ns
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820 Ω
0.1 μF
DUT
V
R
100 μH
0.1 μF
50 Ω Output
Pulse
Generator
50 Ω Input
Sampling
Oscilloscope
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54H
www.onsemi.com
3
100
0.0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5101520
25
14
0
V
R
, REVERSE VOLTAGE (VOLTS)
12
4
2
0
51015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.6
−55°C
150°C
125°C
100
1000
30
2520
6
8
10
I
R
, REVERSE CURRENT (μA)
I
F
, FORWARD CURRENT (mA)
C
T
, TOATAL CAPACITANCE (pF)
P1-P3P4-P4

BAT54HT1G

Mfr. #:
Buy BAT54HT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30V 200mW Single
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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