©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2258/2258A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSC2258
: KSC2258A
250
300
V
V
V
CEO
Collector-Emitter Voltage
: KSC2258
: KSC2258A
250
300
V
V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current (DC) 100 mA
I
CP
Collector Current (Pulse) 150 mA
P
C
Collector Dissipation (T
C
=25°C) 4 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 0.1mA, I
C
= 0 6 V
I
CER
Collector Cut-off Current V
CE
= 250V, R
BE
= 100KΩ 100 µA
h
FE1
h
FE2
DC Current Gain V
CE
= 20V, I
C
= 40mA
V
CE
= 50V, I
C
= 5mA
40
30
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 50mA, I
B
= 5mA 1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -20V, I
C
= 40mA 1.2 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 10mA 100 MHz
C
ob
Output Capacitance V
CB
= 50V, f = 1MHz 3 4.5 pF
KSC2258/2258A
High Voltage General Amplifier
TV Video Output Amplifier
• High BV
CEO
1
TO-126
1. Emitter 2.Collector 3.Base