KSC2258ASTU

©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2258/2258A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSC2258
: KSC2258A
250
300
V
V
V
CEO
Collector-Emitter Voltage
: KSC2258
: KSC2258A
250
300
V
V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current (DC) 100 mA
I
CP
Collector Current (Pulse) 150 mA
P
C
Collector Dissipation (T
C
=25°C) 4 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 0.1mA, I
C
= 0 6 V
I
CER
Collector Cut-off Current V
CE
= 250V, R
BE
= 100K 100 µA
h
FE1
h
FE2
DC Current Gain V
CE
= 20V, I
C
= 40mA
V
CE
= 50V, I
C
= 5mA
40
30
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 50mA, I
B
= 5mA 1.2 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -20V, I
C
= 40mA 1.2 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 10mA 100 MHz
C
ob
Output Capacitance V
CB
= 50V, f = 1MHz 3 4.5 pF
KSC2258/2258A
High Voltage General Amplifier
TV Video Output Amplifier
High BV
CEO
1
TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
KSC2258/2258A
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Current Gain Bandwidth Product Figure 6. Power Derating
0246810
0
20
40
60
80
100
I
B
=2.0mA
I
B
=1.6mA
I
B
=1.4mA
I
B
=1.2mA
I
B
=1.0mA
I
B
=0.8mA
I
B
=0.6mA
I
B
=0.4mA
I
B
=1.8mA
I
B
=0.2mA
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100
1
10
100
1000
V
CE
= 10V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
I
C
= 10 I
B
V
CE
(sat)
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
1 10 100
1
10
f = 1 MHz
C
OB
(pF), CAPACITANCE
V
CB
[V], COLLECTOR BASE VOLTAGE
110100
1
10
100
1000
V
CB
= 10 V
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
0 25 50 75 100 125 150 175 200 225 250
0
1
2
3
4
5
P
D
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2258/2258A
Dimensions in Millimeters
3.25
±0.20
8.00
±0.30
ø3.20
±0.10
0.75
±0.10
#1
0.75
±0.10
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
1.60
±0.10
11.00
±0.20
3.90
±0.10
14.20MAX
16.10
±0.20
13.06
±0.30
1.75
±0.20
(0.50)
(1.00)
0.50
+0.10
–0.05
TO-126

KSC2258ASTU

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Epitaxial Sil
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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