NSVBAT54M3T5G

© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 2
Publication Order Number:
BAT54M3/D
BAT54M3T5G
Schottky Barrier Diode
This Schottky barrier diode is designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
The BAT54M3T5G device is a spin−off of our popular SOT−23
three−leaded device and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ I
F
= 10 mAdc
Reduces Board Space
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
200
2.0
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Non−Repetitive Peak Forward Current
t
p
< 10 msec
I
FSM
600 mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
I
FRM
300 mA
Junction Temperature T
J
55 to +125 °C
Storage Temperature Range T
stg
55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
30 V
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODE
3
CATHODE
1
ANODE
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
BAT54M3T5G SOT−723
(Pb−Free)
8000/Tape & Ree
l
SOT−723
CASE 631AA
STYLE 2
MARKING
DIAGRAM
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
AP = Specific Device Code
M = Date Code
AP M
1
3
2
1
NSVBAT54M3T5G SOT−723
(Pb−Free)
8000/Tape & Ree
l
BAT54M3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I
R
= 10 mA)
V
(BR)R
30 V
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz) C
T
7.6 10 pF
Reverse Leakage (V
R
= 25 V) I
R
0.5 2.0
mA
Forward Voltage (I
F
= 0.1 mA
)
(I
F
= 1.0 mA
)
(I
F
= 10 mA
)
(I
F
= 30 mA
)
(I
F
= 100 mA
)
V
F
0.22 0.24
V
0.29 0.32
0.35 0.40
0.41 0.5
0.52 0.8
Reverse Recovery Time (I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA, Figure 1) t
rr
5.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BAT54M3T5G
http://onsemi.com
3
C
T
, TOATAL CAPACITANCE (pF)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820
Ω
0.1 μF
DUT
V
R
100 μH
0.1 μF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
T
10%
90%
I
F
I
R
t
rr
T
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measure
d
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
510
15
20
25
14
0
V
R
, REVERSE VOLTAGE (VOLTS)
12
4
2
0
51015 30
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.6
−55°C
150°C
125°C
100
1000
3
0
2520
6
8
10
I
R
, REVERSE CURRENT (μA)
I
F
, FORWARD CURRENT (mA)

NSVBAT54M3T5G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SS SWITCHING DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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