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KSC2757OMTF

P1-P3P4-P5
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSC2757
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 30 V
V
CEO
Collector-Emitter Voltage 15 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 50 mA
P
C
Collector Power Dissipation 150 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
=12V, I
E
=0 0.1 µA
h
FE
DC Current Gain V
CE
=10V, I
C
=5mA 60 120 240
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA 0.5 V
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=5mA 800 1100 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 1.5 pF
C
c·rbb’
Noise Figure V
CE
=10V, I
C
=5mA
f=31.9MHz
10 1.5 ps
Classification R O Y
h
FE
60 ~ 120 90 ~ 180 120 ~ 240
1. Base 2. Emitter 3. Collector
KSC2757
Mixer Oscillator for VHF Tuner
• High Current Gain Bandwidth Product : f
T
=1100MHz (TYP)
H3O
Marking
h
FE
grade
1
2
3
SOT-23
©2002 Fairchild Semiconductor Corporation
KSC2757
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristics Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
Figure 5. f
T
- I
C
Figure 6. Output Capacitance
0 5 10 15 20 25
0
4
8
12
16
20
I
B
= 180
µ
A
I
B
= 40
µ
A
I
B
= 140
µ
A
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 160
µ
A
I
B
= 60
µ
A
I
B
= 20
µ
A
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10 100
1
10
100
1000
V
CE
= 10V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
I
C
= 10 I
B
V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
100
1000
10000
I
C
= 10 I
B
V
BE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
10000
V
CE
= 10V
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100
0.1
1
10
100
f = 1MHz
I
E
=0
C
ob
[pF], OUTPUT CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
©2002 Fairchild Semiconductor Corporation
KSC2757
Rev. A2, September 2002
Typical Characteristics
(Continued)
Figure 7. Power Derating Figure 8. yib - f
Figure 9. yfb - f Figure 10. yrb - f
Figure 11. yob - f
0 25 50 75 100 125 150 175 200
0
50
100
150
200
P
C
[mW], POWER DISSIPATION
Ta[
o
C], AMBIENT TEMPERATURE
0 40 80 120 160 200 240
-100
-80
-60
-40
-20
0
20
10 mA
5 mA
I
C
= 3 mA
200 MHz
100 MHz
400 MHz
600 MHz
800 MHz
f = 1000 MHz
yib = g
ib
+ j b
ib
V
CB
= 10 V
b
ib
[ms], SUSCEPTANCE
g
ib
[ms], CONDUCTANCE
-125 -100 -75 -50 -25 0 25
0
25
50
75
100
125
150
400 MHz
1000 MHz
200 MHz
f = 100 MHz
3 mA
5 mA
I
C
= 10 mA
yfb = g
fb
+ j b
fb
V
CB
= 10 V
b
fb
[ms], SUSCEPTANCE
g
fb
[ms], CONDUCTANCE
-0.4 -0.2 0.0 0.2 0.4 0.6
-7.5
-6.0
-4.5
-3.0
-1.5
0.0
10 mA
5 mA
I
C
= 3 mA
1000 MHz
800 MHz
600 MHz
400 MHz
200 MHz
f = 100 MHz
yrb = g
re
+ j b
rb
V
CB
= 10 V
b
rb
[ms], SUSCEPTANCE
g
rb
[ms], CONDUCTANCE
0.0 0.4 0.8 1.2 1.6 2.0
0
2
4
6
8
10
800 MHz
600 MHz
400 MHz
200 MHz
100 MHz
f = 1000 MHz
3 mA
5 mA
I
C
= 10 mA
yob = g
ob
+ j b
ob
V
CB
= 10 V
b
ob
[ms], SUSCEPTANCE
g
ob
[ms], CONDUCTANCE
P1-P3P4-P5

KSC2757OMTF

Mfr. #:
Buy KSC2757OMTF
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Epitaxial Transistor
Lifecycle:
New from this manufacturer.
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