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RJP4009ANS-01#Q6

P1-P3P4-P5
R07DS0370EJ0200 Rev.2.00 Page 1 of 4
Apr 27, 2011
Preliminary Datasheet
RJP4009ANS
Nch IGBT for Strobe Flash
Features
• Small surface mount package (VSON-8)
• V
CES
: 400 V
• I
CM
: 150 A @Tc = 70°C, C
M
= 400 μF
• Drive voltage: 2.5 V to 6 V (MAX)
• Pb-free
• Halogen-free
Outline
RENESAS Package code:
PVSN0008JA-A
(Package name:
VSON-8<TNP-8DBV>)
8
2
41 3
5
6
7
1, 2, 3 : Emitter
4 : Gate
5, 6, 7, 8 : Collecto
r
8
4
1
5
Applications
Strobe flash for cameras
Maximum Ratings
(Tc = 25°C)
Parameter Symbol Ratings Unit Conditions
Collector-emitter voltage V
CES
400 V V
GE
= 0 V
Gate-emitter voltage V
GES
±6 V V
CE
= 0 V
Collector current (Pulse) I
CM
150 A
C
M
= 400 μF
(see performance curve)
Power dissipation Pj 1.8 W
Junction temperature Tj –40 to +150 °C
Storage temperature Tstg –40 to +150 °C
R07DS0370EJ0200
Rev.2.00
Apr 27, 2011
RJP4009ANS Preliminary
R07DS0370EJ0200 Rev.2.00 Page 2 of 4
Apr 27, 2011
Electrical Characteristics
(Tj = 25°C)
Parameter Symbol Min. Typ. Max. Unit Test conditions
Collector-emitter leakage current I
CES
— — 1 μA V
CE
= 400 V, V
GE
= 0 V
Gate-emitter leakage current I
GES
— — ±10 μA V
GE
= ±6 V, V
CS
= 0 V
Gate-emitter threshold voltage V
GE(th)
0.4 0.6 1.2 V V
CE
= 10 V, I
C
= 1 mA
Collector-emitter saturation voltage V
CE(sat)
— 4.0 9.0 V I
C
= 150 A, V
GE
= 2.5 V
Input capacitance Cies — 5500 — pF
V
CE
= 25 V, V
GE
= 0 V,
f = 1 MHz
Performance Curves
Maximum Pulse Collector Current
(Conductive Capability in Strobe Flash Circuit)
Gate - Emitter Voltage V
GE
(V)
Pulse Collector Current I
CM
(A)
0
50
100
200
150
01234 765
RJP4009ANS Preliminary
R07DS0370EJ0200 Rev.2.00 Page 3 of 4
Apr 27, 2011
Application Example
C
M
+
–
8
Xe Tube
Trigger Transformer
V
CM
765
1234
V
CM
I
CP
C
M
V
GE
Maximum Operation
Conditions
IGBT drive
r
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 400 V/ μs. In general, when R
G (off)
= 30 Ω, it is satisfied.
3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (I
Xe
≤ 150 A :
full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over
3 seconds.
P1-P3P4-P5

RJP4009ANS-01#Q6

Mfr. #:
Buy RJP4009ANS-01#Q6
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors IGBT for strobe flash
Lifecycle:
New from this manufacturer.
Delivery:
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