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NRVBA130LT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
April, 2017 − Rev. 9
1 Publication Order Number:
MBRA130LT3/D
MBRA130LT3G,
NRVBA130LT3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Low Forward Voltage Drop
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or
Polarity Band
• Device Meets MSL1 Requirements
• ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
www.onsemi.com
MARKING DIAGRAM
SMA
CASE 403D
PLASTIC
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
MBRA130LT3G SMA
(Pb−Free)
5,000 /
Tape & Reel **
B1L3 = Specific Device Code
A = Assembly Location***
Y = Year
WW = Work Week
G = Pb−Free Package
B1L3
AYWWG
NRVBA130LT3G* SMA
(Pb−Free)
5,000 /
Tape & Reel **
** 12 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
***The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
MBRA130LT3G, NRVBA130LT3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 105°C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
C
= 105°C)
I
FRM
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
25
A
Storage Temperature T
stg
−55 to +150 °C
Operating Junction Temperature T
J
−55 to +125 °C
Voltage Rate of Change, (Rated V
R
, T
J
= 25°C) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Thermal Resistance — Junction−to−Lead (Note 1)
Thermal Resistance — Junction−to−Ambient (Note 1)
R
q
JL
R
q
JA
35
86
°C/W
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 1.0 A) see Figure 2
(I
F
= 2.0 A)
V
F
T
J
= 25°C T
J
= 100°C
Volts
0.41
0.47
0.35
0.43
Maximum Instantaneous Reverse Current
(V
R
= 30 V) see Figure 4
(V
R
= 15 V)
I
R
T
J
= 25°C T
J
= 100°C
mA
1.0
0.4
25
12
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
MBRA130LT3G, NRVBA130LT3G
www.onsemi.com
3
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
0.1
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.4 1.00
0.1
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0E-6
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
I
0.6 0.8 1.0 0.6 0.80.2
1.0
10
T
J
= 25°C
10 20
0 0.2 0.4
30
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
T
J
= -40°C
10E-6
100E-6
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
1.0E-3
10E-3
100E-3
, REVERSE CURRENT (AMPS)
R
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0E-6
I
10 20 30
10E-6
100E-6
T
J
= 25°C
T
J
= 85°C
1.0E-3
10E-3
100E-3
, MAXIMUM REVERSE CURRENT (AMPS)
R
P1-P3P4-P5

NRVBA130LT3G

Mfr. #:
Buy NRVBA130LT3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers REC SMA 1A 30V SHTKY TR
Lifecycle:
New from this manufacturer.
Delivery:
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