FJN3302RBU Datasheet FJN3302RBU | P1-P3

FJN3302R — NPN Epitaxial Silicon Transistor with Bias Resistor

FJN3302R Rev. 1.1.2 1

November 2013

FJN3302R

NPN Epitaxial Silicon Transistor with Bias Resistor

Features

• 100 mA Output Current Capability

• Built-in Bias Resistor (R

1

= 10 kΩ, R

2

= 10 kΩ)

Applications

• Switching, Interface, and Driver Circuits

• Inverters

• Digital Applications in Industrial Segments

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

FJN3302RTA R3302 TO-92 3L Ammo

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage 50 V

V

CEO

Collector-Emitter Voltage 50 V

V

EBO

Emitter-Base Voltage 10 V

I

C

Collector Current 100 mA

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 to 150 °C

Equivalent Circuit

C

R1

E

B

R2

1. Emitter 2. Collector 3. Base

TO-92

1

Description

Transistors with built-in resistors can be excellent

space- and cost-saving solutions by reducing compo-

nent count and simplifying circuit design.

FJN3302R — NPN Epitaxial Silicon Transistor with Bias Resistor

FJN3302R Rev. 1.1.2 2

Thermal Characteristics

(1)

Values are at T

A

= 25°C unless otherwise noted.

Note:

1. PCB size: FR-4 76 x 114 x 0.6T mm

3

(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at T

A

= 25°C unless otherwise noted.

Symbol Parameter Value Unit

P

D

Power Dissipation 300 mW

Derate Above T

A

= 25°C 2.4 mW/°C

R

θJA

Thermal Resistance, Junction to Ambient 416 °C/W

Symbol Parameter Conditions Min. Typ. Max. Unit

BV

CBO

Collector-Base Breakdown Voltage I

C

= 10 μA, I

E

= 0 50 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 100 μA, I

B

= 0 50 V

I

CBO

Collector Cut-Off Current V

CB

= 40 V, I

E

= 0 0.1 μA

h

FE

DC Current Gain V

CE

= 5 V, I

C

= 5 mA 30

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 10 mA, I

B

= 0.5 mA 0.3 V

f

T

Current Gain Bandwidth Product V

CE

= 10 V, I

C

= 5 mA 250 MHz

C

ob

Output Capacitance

V

CB

= 10 V, I

E

= 0,

f = 1.0 MHz

3.7 pF

V

I

(off) Input-Off Voltage V

CE

= 5 V, I

C

= 100 μA0.5V

V

I

(on) Input-On Voltage V

CE

= 0.3 V, I

C

= 10 mA 3 V

R

1

Input Resistor 7 10 13 kΩ

R

1

/R

2

Resistor Ratio 0.9 1.0 1.1

FJN3302R — NPN Epitaxial Silicon Transistor with Bias Resistor

FJN3302R Rev. 1.1.2 3

Typical Performance Characteristics

Figure 1. DS Current Gain Figure 2. Input-On Voltage

Figure 3. Input-Off Voltage Figure 4. Power Derating

1 10 100 1000

10

100

1000

V

CE

= 5V

R

1

= 10K

R

2

= 10K

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

0.1

1

10

100

V

CE

=0.3V

R

1

= 10 K

R

2

= 10 K

V

I

(on)[V], INPUT VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.0 0.4 0.8 1.2 1.6 2.0 2.4

10

100

1000

V

CE

= 5V

R

1

= 10K

R

2

= 10K

I

C

[μA], COLLECTOR CURRENT

V

I

(off)[V], INPUT OFF VOLTAGE

0 25 50 75 100 125 150 175

0

50

100

150

200

250

300

350

P

C

[mW], POWER DISSIPATION

T

a

[

o

C], AMBIENT TEMPERATURE

FJN3302RBU

FJN3302RBU

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