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SIB914DK-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
Vishay Siliconix
SiB914DK
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Soure-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
10
T
J
= 150 °C
T
J
= 25 °C
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.05
0.10
0.15
0.20
0.25
02468
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=2.5A
0
2
4
6
8
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)I
D
10
0.1
0.1 1
1
T
A
= 25 °C
Single Pulse
1ms
10 ms
0.01
DC
BVDSS Limited
10
100 µs
Limited byR
DS(on)*
100 ms
1 s, 10 s
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
www.vishay.com
5
Vishay Siliconix
SiB914DK
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating, Junction-to-Case
0
1
2
3
4
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
Vishay Siliconix
SiB914DK
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68792.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
100010110
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
1
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
1
0.1
Single Pulse
P1-P3P4-P6P7-P9

SIB914DK-T1-GE3

Mfr. #:
Buy SIB914DK-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Lifecycle:
New from this manufacturer.
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