www.irf.com 1
05/29/06
IRF6611PbF
IRF6611TRPbF
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical On-Resistance vs. Gate Voltage
Notes:
SQ SX ST MQ MX MT
0 1 2 3 4 5 6 7 8 9 10
V
GS,
Gate -to -Source Voltage (V)
0
5
10
15
20
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
I
D
= 27A
T
J
= 25°C
T
J
= 125°C
0 1020304050
Q
G
Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 22A
PD - 97216
DirectFET ISOMETRIC
MX
DirectFET Power MOSFET
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
R
DS(on)
30V max ±20V max
2.0mΩ@ 10V 2.6mΩ@ 4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
37nC 12nC 3.3nC 16nC 23nC 1.7V
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
Description
The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6611PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6611PbF has been optimized for parameters that
are critical in synchronous buck converter’s SyncFET sockets.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.91mH, R
G
= 25Ω, I
AS
= 22A.
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Max.
26
150
220
±20
30
32
310
22
