DG2032
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72387
S-31650—Rev. A, 18-Aug-03
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ -0.3 to +6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
-0.3 to (V+ + 0.3 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal) "50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current "200 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) -65 to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Packages)
b
12-Pin QFN (3 x 3)
c
1295 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Solder Reflow Conditions
d
12-Pin QFN (3 x 3) 240°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 16.2 mW/_C above 70_C
d. Manual soldering with an iron is not recommended for leadless compo-
nents. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in
manufacturing. A solder fillet at the exposed copper lip cannot be guar-
anteed and is not required to ensure adequate bottom side solder inter-
connection.
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Parameter Symbol
V+ = 3 V, "10%, V
IN
= 0.4 or 2.0 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full 0 V+ V
On-Resistance r
ON
V+ = 2.7 V, V
COM
= 0.2 V/1.5 V
I
NO
, I
NC
= 10 mA
Room
Full
3.0 5
6.5
r
ON
Flatness
r
ON
Flatness
V+ = 2.7 V
Room 1.6
W
r
ON
Match Between Channels Dr
ON
V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room 0.4
Switch Off Leakage Current
I
NO(off)
,
I
NC(off)
V+ = 3.3 V, V
N
, V
N
= 0.3 V/3 V
Room
Full
-1
-10
0.01
1
10
Switch Off Leakage Current
I
COM(off)
.
,
,
.
V
COM
= 3 V/0.3 V
Room
Full
-1
-10
0.01
1
10
nA
Channel-On Leakage Current I
COM(on)
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
Room
Full
-1
-10
0.01
1
10
Digital Control
Input High Voltage V
INH
Full 2.0
Input Low Voltage V
INL
Full 0.4
Input Capacitance C
in
Full 5 pF
Input Current I
INL
or I
INH
V
IN
= 0 or V+ Full 1 1 mA
Dynamic Characteristics
Turn-On Time t
ON
V
NO
or V
NC
= 2 0 V R
L
= 50 W C
L
= 35 pF
Room
Full
28 53
59
Turn-Off Time t
OFF
NO
or
NC
=
.
,
L
=
5
,
L
=
5
p
Room
Full
13 38
38
ns
Break-Before-Make Time t
d
V
NO
or V
NC
= 2.0 V, R
L
= 50 W, C
L
= 35 pF Full 1
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 W Room 38 pC
Off-Isolation
d
OIRR
R
L
= 50 W C
L
= 5 pF f = 1 MHz
Room -78
Crosstalk
d
X
TALK
R
L
= 50 W, C
L
= 5 pF, f = 1 MHz
Room -82
dB
N
O
N
C
Off Capacitance
d
C
NO(off)
Room 15
N
O
, N
C
Off Capacitance
C
NC(off)
Room 15
C
NO(on)
V
IN
= 0 or V+, f = 1 MHz
Room 49
pF
Channel-On Capacitance
C
NC(on)
Room 45
Power Supply
Power Supply Current I+ V
IN
= 0 or V+ Full 0.01 1.0 mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
