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TK18A50D(STA4,Q,M)

P1-P3P4-P6
TK18A50D
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK18A50D
Switching Regulator Applications
• Low drain-source ON resistance: R
DS (ON)
= 0.22 Ω (typ.)
• High forward transfer admittance: ⎪Y
fs
⎪ = 8.5 S (typ.)
• Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 500 V)
• Enhancement-mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
500 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
18
Drain current
Pulse (Note 1) I
DP
72
A
Drain power dissipation (Tc = 25°C)
P
D
50 W
Single pulse avalanche energy
(Note 2)
E
AS
533 mJ
Avalanche current I
AR
18 A
Repetitive avalanche energy (Note 3) E
AR
5.0 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.5 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 2.8 mH, R
G
= 25 Ω, I
AR
= 18 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC ⎯
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
1: Gate
2: Drain
3: Source
Internal Connection
Start of commercial production
2009-01
TK18A50D
2013-11-01
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±30 V, V
DS
= 0 V ⎯ ⎯ ±1 μA
Drain cut-off current I
DSS
V
DS
= 500 V, V
GS
= 0 V ⎯ ⎯ 10 μA
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 500 ⎯ ⎯ V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 9 A ⎯ 0.22 0.27
Ω
Forward transfer admittance |Y
fs
| V
DS
= 10 V, I
D
= 9 A 2.4 8.5 ⎯ S
Input capacitance C
iss
⎯ 2600 ⎯
Reverse transfer capacitance C
rss
⎯ 11 ⎯
Output capacitance C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
⎯ 280 ⎯
pF
Rise time t
r
⎯
50
⎯
Turn-on time t
on
⎯
100
⎯
Fall time t
f
⎯
25
⎯
Switching time
Turn-off time t
off
Duty ≤ 1%, t
w
= 10 μs
⎯
150
⎯
ns
Total gate charge Q
g
⎯
45
⎯
Gate-source charge Q
gs
⎯
28
⎯
Gate-drain charge Q
gd
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 18 A
⎯
17
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR
⎯ ⎯ ⎯ 18 A
Pulse drain reverse current (Note 1) I
DRP
⎯ ⎯ ⎯ 72 A
Forward voltage (diode) V
DSF
I
DR
= 18 A, V
GS
= 0 V ⎯ ⎯ −1.7
V
Reverse recovery time t
rr
⎯ 1700 ⎯ ns
Reverse recovery charge Q
rr
I
DR
= 18 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/μs
⎯ 26 ⎯ μC
Marking
Lot No.
K18A50D
Part No.
(or abbreviation code)
Note 4
Note 4: A line under a Lot No. identifies the indication of product Labels
`G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
R
L
= 22 Ω
0 V
10 V
V
GS
V
DD
≈ 200 V
I
D
= 9 A V
OUT
50 Ω
TK18A50D
2013-11-01
3
0
6
8
10
0
4.5
4 8 12 16 20
9
ID = 18 A
4
2
10
0
0 2
4
6 8
10
50
Tc = −55 °C
25
100
20
30
40
50
40
30
20
0
0 20 40 50
V
GS
= 6 V
10
8
30
10
7.5
7
10
6.5
20
16
8
4
0
0 2 4 6 8 10
V
GS
= 6 V
6.5
7.5
8
10
6.7
7
12
R
DS (ON)
– I
D
V
DS
– V
GS
I
D
– V
DS
⎪Y
fs
⎪ – I
D
I
D
– V
DS
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪ (S)
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A) DRAIN CURRENT I
D
(A)
I
D
– V
GS
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
V
DS
= 20 V
PULSE TEST
COMMON SOURCE
Tc = 25℃
PULSE TEST
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
DRAIN-SOURCE VOLTAGE V
DS
(V)
0.1
0.1 1 100
V
GS
= 10, 15 V
1
10
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
25
100
Tc = −55 °C
0.1
100
0.1 1 100
10
10
COMMON SOURCE
V
DS
= 10 V
PULSE TEST
P1-P3P4-P6

TK18A50D(STA4,Q,M)

Mfr. #:
Buy TK18A50D(STA4,Q,M)
Manufacturer:
Toshiba
Description:
MOSFET N-Ch MOS 18A 500V 50W 2600pF 0.27
Lifecycle:
New from this manufacturer.
Delivery:
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