IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA260N055T2-7
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 55 94 S
C
iss
10.8 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1460 pF
C
rss
215 pF
t
d(on)
20 ns
t
r
27 ns
t
d(off)
36 ns
t
f
24 ns
Q
g(on)
140 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
52 nC
Q
gd
32 nC
R
thJC
0.31 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 260 A
I
SM
Repetitive, Pulse width limited by T
JM
1000 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.3 V
t
rr
60 ns
I
RM
3.4
A
Q
RM
102 nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 100A
R
G
= 2Ω (External)
I
F
= 130A, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 27V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA..7) Outline
