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DMP3008SFG-7

P1-P3P4-P6P7-P7
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
1 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
ADVANCE INFORMATION
30V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
-30V
17mΩ @ V
GS
= -10V
-8.6A
25mΩ @ V
GS
= -4.5V
-7.1A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters
Features and Benefits
• Low R
DS(ON)
– ensures on state losses are minimized
• Small form factor thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: POWERDI3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP3008SFG-7 POWERDI3333-8 2000/Tape & Reel
DMP3008SFG-13 POWERDI3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Bottom View Internal Schematic
S
S
S
G
D
D
D
D
Pin 1
Top View
S31 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
Source
Gate
Drain
S31
YYWW
POWERDI3333-8
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
2 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
ADVANCE INFORMATION
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-8.6
-7.0
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-11.7
-9.3
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-7.1
-5.6
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-9.6
-7.6
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-80 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
-3.0 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
0.9 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
140 °C/W
t<10s 72 °C/W
Total Power Dissipation (Note 6)
P
D
2.2 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θ
JA
57 °C/W
t<10s 30 °C/W
Thermal Resistance, Junction to Case (Note 6)
R
θ
JC
7.1 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
0.1 1 10
100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
T = 150°C
T = 25°C
Single Pulse
J(max)
A
0
10
20
30
40
50
60
70
80
90
100
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,0000.0001
Single Pulse
R = 57C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
P , PEAK TRANSIENT POIWER (W)
(PK)
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
3 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
ADVANCE INFORMATION
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
1
R (t) = r(t) * R
θθ
JA JA
R = 57°C/W
Duty Cycle, D = t1/ t2
θ
JA
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
Electrical Characteristics T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1.0
µA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-1.1 -1.6 -2.1 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
12.5 17
mΩ
V
GS
= -10V, I
D
= -10A
⎯
18.5 25
V
GS
= -4.5V, I
D
= -10A
Forward Transfer Admittance
|Y
fs
|
⎯
13
⎯
S
V
DS
= -15V, I
D
= -10A
Diode Forward Voltage
V
SD
⎯
-0.7 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
2230
⎯
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
328
⎯
Reverse Transfer Capacitance
C
rss
⎯
294
⎯
Gate Resistance
R
G
⎯
6.4
⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -10V) Q
g
⎯
47
⎯
nC
V
DS
= -15V, I
D
= -10A
Total Gate Charge (V
GS
= -4.5V) Q
g
⎯
23
⎯
Gate-Source Charge
Q
g
s
⎯
9.4
⎯
Gate-Drain Charge
Q
g
d
⎯
5.6
⎯
Turn-On Delay Time
t
D
(
on
)
⎯
10.5
⎯
ns
V
GS
= -10V, V
DS
= -15V, R
G
= 6Ω
Turn-On Rise Time
t
⎯
8.5
⎯
Turn-Off Delay Time
t
D
(
off
)
⎯
90
⎯
Turn-Off Fall Time
t
f
⎯
40
⎯
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
P1-P3P4-P6P7-P7

DMP3008SFG-7

Mfr. #:
Buy DMP3008SFG-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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