BSP317PE6327T

P1-P3 P4-P6 P7-P8

2002-07-17

Page 1

Preliminary data

BSP 317 P

SIPMOS







Small-Signal-Transistor

Product Summary

V

DS

-250 V

R

DS(on)

4 Ω

I

D

-0.43 A

Feature

• P-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

SOT-223

VPS05163

1

2

3

4

Gate

pin1

Drain

pin 2/4

Source

pin 3

Marking

BSP317P

Type Package Ordering Code Tape and Reel Information

BSP 317 P

SOT-223 Q67042-S4167

-

Maximum Ratings, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Value Unit

Continuous drain current

T

A

=25°C

T

A

=70°C

I

D

-0.43

-0.34

A

Pulsed drain current

T

A

=25°C

I

D puls

-1.72

Reverse diode dv/dt

I

S

=-0.43A, V

DS

=-200V, di/dt=-200A/µs, T

jmax

=150°C

dv/dt

6 kV/µs

Gate source voltage V

GS

±20

V

Power dissipation

T

A

=25°C

P

tot

1.8 W

Operating and storage temperature T

j

,

T

stg

-55... +150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

2002-07-17

Page 2

Preliminary data

BSP 317 P

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

R

thJS

- 15 25 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

1)

R

thJA

-

-

80

48

115

70

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0, I

D

=-250µA

V

(BR)DSS

-250 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

=-370µA

V

GS(th)

-1 -1.5 -2

Zero gate voltage drain current

V

DS

=-250V, V

GS

=0, T

j

=25°C

V

DS

=-250V, V

GS

=0, T

j

=150°C

I

DSS

-

-

-0.1

-10

-0.2

-100

µA

Gate-source leakage current

V

GS

=-20V, V

DS

=0

I

GSS

- -10 -100 nA

Drain-source on-state resistance

V

GS

=-4.5V, I

D

=-0.39A

R

DS(on)

- 3.3 5

Ω

Drain-source on-state resistance

V

GS

=-10V, I

D

=-0.43A

R

DS(on)

- 3 4

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2002-07-17

Page 3

Preliminary data

BSP 317 P

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

|V

DS

|≥2*|I

D

|*R

DS(on)max

,

I

D

=-0.34A

0.38 0.76 - S

Input capacitance C

iss

V

GS

=0, V

DS

=-25V,

f=1MHz

- 210 262 pF

Output capacitance C

oss

- 30 37

Reverse transfer capacitance C

rss

- 13.4 16.7

Turn-on delay time t

d(on)

V

DD

=-30V, V

GS

=-10V,

I

D

=-0.43A, R

G

=6Ω

- 5.7 8.5 ns

Rise time t

r

- 11.1 16.6

Turn-off delay time t

d(off)

- 254 381

Fall time t

f

- 67 100

Gate Charge Characteristics

Gate to source charge

Q

gs

V

DD

=-200V, I

D

=-0.43A - -0.5 -0.65 nC

Gate to drain charge Q

gd

- -4 -5.2

Gate charge total Q

g

V

DD

=-200V, I

D

=-0.43A,

V

GS

=0 to -10V

- -11.6 -15.1

Gate plateau voltage V

(plateau)

V

DD

=-200V, I

D

=-0.43A - -2.8 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

A

=25°C - - -0.43 A

Inv. diode direct current, pulsedI

SM

- - -1.72

Inverse diode forward voltage V

SD

V

GS

=0, I

F

=-0.43A - -0.84 -1.2 V

Reverse recovery time t

rr

V

R

=-125V, I

F

=

l

S

,

di

F

/dt=100A/µs

- 92 138 ns

Reverse recovery charge Q

rr

- 210 315 nC

P1-P3 P4-P6 P7-P8

BSP317PE6327T

Mfr. #:

Buy BSP317PE6327T

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH 250V 0.43A SOT223

Lifecycle:

New from this manufacturer.

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