Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
PBSS4160X All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 23 May 2017 4 / 12
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 250 K/W
[2] - - 132 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[3] - - 93 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm
2
.
aaa-026759
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0
0.50
0.33
0.20
0.10
0.05
0.02
0.01
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026760
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.01
0
0.02
FR4 PCB, mounting pad for collector 1 cm
2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
