Vishay Siliconix
Si7440DP
Document Number: 71623
S09-0270-Rev. D, 16-Feb-09
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• 100 % R
g
Tested
APPLICATIONS
• DC/DC Converters
• Optimized for “Low-Side” Synchronous Rectifier
Operation
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.0065 at V
GS
= 10 V 21
0.008 at V
GS
= 4.5 V 19
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information:
Si7440DP-T1-E3 (Lead (Pb)-free)
Si7440DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFE
G
D
S
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25°C
I
D
21 12
A
T
A
= 70°C 17 9
Pulsed Drain Current I
DM
60
Continuous Source Current (Diode Conduction)
a
I
S
4.3 1.6
Maximum Power Dissipation
a
T
A
= 25°C
P
D
5.4 1.9
W
T
A
= 70°C 3.4 1.2
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
18 23
°C/W
Steady State 52 65
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.0 1.3