VS-MURB1620CTPbF, VS-MURB1620CT-1PbF
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Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94519
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 2 x 8 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
2 x 8 A
V
R
200 V
V
F
at I
F
0.895 V
t
rr
35 ns
T
J
max. 175 °C
Diode variation Common cathode
TO-262AATO-263AB (D
2
PAK)
Base
common
cathode
Common
cathode
Anode
1
Anode
2
2
12 3
Base
common
cathode
Common
cathode
Anode
1
Anode
2
2
12 3
VS-MURB1620CTPbF VS-MURB1620CT-1PbF
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per leg
I
F(AV)
8.0
A
total device Rated V
R
, T
C
= 150 °C 16
Non-repetitive peak surge current per leg I
FSM
100
Peak repetitive forward current per leg I
FM
Rated V
R
, square wave, 20 kHz, T
C
= 150 °C 16
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 8 A - - 0.975
I
F
= 8 A, T
J
= 150 °C - - 0.895
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 150 °C, V
R
= V
R
rated - - 250
Junction capacitance C
T
V
R
= 200 V - 25 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
