MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jun-2018
1
Document Number: 88789
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DESIGN SUPPORT TOOLS
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
35 V, 45 V, 60 V
I
FSM
150 A
V
F
0.54 V, 0.60 V
I
R
100 μA
T
J
max. 175 °C
Package D
2
PAK (TO-263AB)
Circuit configuration Common cathode
D
2
PAK (TO-263AB)
MBRB25HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
K
click logo to get started
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRB25H35CT MBRB25H45CT MBRB25H60CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 60
VWorking peak reverse voltage V
RWM
35 45 60
Maximum DC blocking voltage V
DC
35 45 60
Max. average forward rectified current (fig. 1)
total device
I
F(AV)
30
A
per diode 15
Non-repetitive avalanche energy per diode at 25 °C,
I
AS
= 4 A, L = 10 mH
E
AS
80 mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
150 A
Peak repetitive reverse surge current per diode at t
p
= 2.0 μs,
1 kHz
I
RRM
1.0 1.0 0.5 A
Peak non-repetitive reverse energy (8/20 μs waveform) E
RSM
25 25 20 mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
