BC857BLP4-7B Datasheet BC857BLP4-7B, BC857BLP4-7 | P1-P3

BC857BLP4

Document number: DS31361 Rev. 6 - 2

1 of 5

www.diodes.com

May 2015

BC857BLP4

45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006

Features

 BV

CEO

> -45V

 I

C

= -100mA High Collector Current

 P

D

= 1000mW Power Dissipation

 0.60mm

2

Package Footprint, 13 times Smaller than SOT23

 0.4mm Height Package Minimizing Off-Board Profile

 Complementary NPN Type BC847BLP4

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. "Green" Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: X2-DFN1006-3

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  NiPdAu.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0008 grams (Approximate)

Ordering Information (Note 4)

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

BC857BLP4-7

F2

7

8

3,000

BC857BLP4-7B

F2

7

8

10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Device Schematic

Bottom View

F2 = Product Type Marking Code

X2-DFN1006-3

Device Symbol

C

E

B

C

E

B

BC857BLP4-7

BC857BLP4-7B

Top View

Bar Denotes Base and Emitter Side

Top View

Dot Denotes Collector Side

F2

Top View

Bar Denotes Base and Emitter Side

From date code 1527 (YYWW),

this changes to:

e4

BC857BLP4

Document number: DS31361 Rev. 6 - 2

2 of 5

www.diodes.com

May 2015

BC857BLP4

Absolute Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-50

V

Collector-Emitter Voltage

V

CEO

-45

V

Emitter-Base Voltage

V

EBO

-5.0

V

Collector Current

I

C

-100

mA

Peak Pulse Collector Current

I

CM

-200

mA

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

P

D

400

mW

(Note 6)

1000

Thermal Resistance, Junction to Ambient

(Note 5)

R



JA

310

C/W

(Note 6)

120

Thermal Resistance, Junction to Lead

(Note 7)

R



JL

120

°C/W

Operating and Storage and Temperature Range

T

J

, T

STG

-55 to +150

°C

ESD Ratings (Note 8)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

200

V

B

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BV

CBO

-50

—

V

I

C

= 10µA, I

B

= 0

Collector-Emitter Breakdown Voltage (Note 9)

BV

CEO

-45

—

V

I

C

= 10mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

-5

—

V

I

E

= 1µA, I

C

= 0

DC Current Gain

h

FE

220

300

475

—

V

CE

= -5.0V, I

C

= -2.0mA

Collector-Emitter Saturation Voltage (Note 9)

V

CE(SAT)

—

-90

-250

-300

-650

mV

I

C

= -10mA, I

B

= -0.5mA

I

C

= -100mA, I

B

= -5.0mA

Base-Emitter Saturation Voltage (Note 9)

V

BE(SAT)

—

-700

-850

—

mV

I

C

= -10mA, I

B

= -0.5mA

I

C

= -100mA, I

B

= -5.0mA

Base-Emitter Voltage (Note 9)

V

BE(ON)

-600

—

-670

-710

-750

-820

mV

V

CE

= -5.0V, I

C

= -2.0mA

V

CE

= -5.0V, I

C

= -10mA

Collector-Cutoff Current

I

CBO

—

-15

-4.0

nA

µA

V

CB

= -30V

V

CB

= -30V, T

A

= +150°C

Gain Bandwidth Product

f

T

100

—

MHz

V

CE

= -5.0V, I

C

= -10mA,

f = 100MHz

Collector-Base Capacitance

C

CBO

—

3.0

—

pF

V

CB

= -10V, f = 1.0MHz

Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.

6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.

7. Thermal resistance from junction to solder-point (on the exposed collector pad).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

BC857BLP4

Document number: DS31361 Rev. 6 - 2

3 of 5

www.diodes.com

May 2015

BC857BLP4

Typical Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

-I , COLLECTOR CURRENT (A)

C

Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage

0 1 2 3 4 5

0

20

40

60

80

100

I = -0.1mA

B

I = -0.2mA

B

I = -0.3mA

B

I = -0.4mA

B

I = -0.5mA

B

0

100

200

300

400

500

1 10 100 1,000

I , COLLECTOR CURRENT (A)

C

V , BASE-EMITTER TURN-ON VOLTAGE (V)

BE(ON)

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

0.1 1 10 100

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

I , COLLECTOR CURRENT (A)

C

V , BASE-EMITTER SATURATION VOLTAGE (V)

BE(SAT)

0.1 1 10 100

BC857BLP4-7B

BC857BLP4-7B

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