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DMP3098L-7

P1-P3P4-P5
DMP3098L
Document number: DS31447 Rev. 8 - 2
1 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3098L
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
-30V
70mΩ@ V
GS
= -10V
-3.8A
120mΩ@ V
GS
=-4.5V
-3.0A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Power management functions
Analog Switch
Load Switch
Boost Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP3098L-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Pin Configuration
D
G
S
SOT-23
DMB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y
̅
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
DMB
YM
Source
Gate
Drain
EQUIVALENT CIRCUIT
Chengdu A/T Site
Shanghai A/T Site
DMP3098L
Document number: DS31447 Rev. 8 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3098L
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20 V
Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.8
-2.9
A
Pulsed Drain Current (Note 6)
I
DM
-11 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.08 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
R
JA
115 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
-800 nA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-1.0 -1.8 -2.1 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
56
98
70
120
mΩ
V
GS
= -10V, I
D
= -3.8A
V
GS
= -4.5V, I
D
= -3.0A
Forward Transfer Admittance
|Y
fs
|
3.6
S
V
DS
= -5V, I
D
= -2.7A
Diode Forward Voltage (Note 6)
V
SD
-1.26 V
V
GS
= 0V, I
S
= -2.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
336 1008 pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
70 210 pF
Reverse Transfer Capacitance
C
rss
49 147 pF
Gate Resistance
R
G

4.6

Ω
V
GS
= 0V, V
DS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
g

4.0
8.0
nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -3.8A

7.8

V
DS
= -15V, V
GS
= -10V,
I
D
= -3.8A
Gate-Source Charge
Q
g
s

1.0

Gate-Drain Charge
Q
g
d

2.5

Turn-On Delay Time
t
d
(
on
)

6.0 12.0
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0Ω
Rise Time
t
r

5.0 10.0
Turn-Off Delay Time
t
d
(
off
)

17.6 35.2
Fall Time
t
f

9.5 19.0
Notes: 5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.
2
copper pads and t ≤5 sec.
6. Pulse width ≤10S, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP3098L
Document number: DS31447 Rev. 8 - 2
3 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMP3098L
NEW PRODUCT
-I , DRAIN CURRENT (A)
D
Fig. 1 Typical Output Characteristics
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
4
8
12
16
20
012345
V = -2.5V
GS
V = -4.5V
GS
V = -10V
GS
V = -1.5V
GS
V = -3.0V
GS
Fig. 2 Typical Transfer Characteristics
-V , GATE SOURCE VOLTAGE (V)
GS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
4
8
12
16
20
12 3 456
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
0.01
0.1
1
04 8121620
, S
A
I
D
AIN-S
E
ON-RESISTANCE ( )
DS(ON)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN CURRENT (A)
D
V = -4.5V
GS
V = -10V
GS
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
024 6810
, S
A
I
D
AIN-S
E
ON-RESISTANCE ( )
DS(ON)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
-I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , STATIC DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = -4.5V
I = -4.2A
GS
D
V = -10V
I = -5.3A
GS
D
10
100
1,000
0 5 10 15 20 25 30
C
,
C
A
P
A
C
I
T
AN
C
E (pF)
Fig. 6 Typical Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C
iss
C
oss
C
rss
P1-P3P4-P5

DMP3098L-7

Mfr. #:
Buy DMP3098L-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET P-Channel 1.25W
Lifecycle:
New from this manufacturer.
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