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BDX34C-S

P1-P3P4-P5
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
1
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with
BDX33, BDX33A, BDX33B, BDX33C and
BDX33D
●
70 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
Minimum h
FE
of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
V
CBO
-45
-60
-80
-100
-120
V
Collector-emitter voltage (I
B
= 0)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
V
CEO
-45
-60
-80
-100
-120
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-10 A
Continuous base current I
B
-0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P
tot
70 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P
tot
2W
Operating free air temperature range T
J
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating free-air temperature range T
A
-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is currently available, but
not recommended for new designs.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -100 mA I
B
= 0 (see Note 3)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-45
-60
-80
-100
-120
V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CE
= -30 V
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
I
B
=0
I
B
=0
I
B
=0
I
B
=0
I
B
=0
I
B
=0
I
B
=0
I
B
=0
I
B
=0
I
B
=0
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-0.5
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
mA
I
CBO
Collector cut-off
current
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
I
E
=0
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
T
C
= 100°C
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-1
-1
-1
-1
-1
-5
-5
-5
-5
-5
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V I
C
=0 -10 mA
h
FE
Forward current
transfer ratio
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
I
C
=-4 A
I
C
=-4 A
I
C
=-3 A
I
C
=-3 A
I
C
=-3 A
(see Notes 3 and 4)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
750
750
750
750
750
V
BE(on)
Base-emitter
voltage
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
V
CE
= -3 V
I
C
=-4 A
I
C
=-4 A
I
C
=-3 A
I
C
=-3 A
I
C
=-3 A
(see Notes 3 and 4)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-2.5
-2.5
-2.5
-2.5
-2.5
V
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -8 mA
I
B
= -8 mA
I
B
= -6 mA
I
B
= -6 mA
I
B
= -6 mA
I
C
=-4 A
I
C
=-4 A
I
C
=-3 A
I
C
=-3 A
I
C
=-3 A
(see Notes 3 and 4)
BDX34
BDX34A
BDX34B
BDX34C
BDX34D
-2.5
-2.5
-2.5
-2.5
-2.5
V
V
EC
Parallel diode
forward voltage
I
E
= -8 A I
B
= 0 -4 V
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
3
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 1.78 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
on
Tu r n - o n t i m e I
C
= -3 A
V
BE(off)
= 3.5 V
I
B(on)
= -12 mA
R
L
= 10 Ω
I
B(off)
= 12 mA
t
p
= 20 µs, dc ≤ 2%
1µs
t
off
Turn-off time 5µs
P1-P3P4-P5

BDX34C-S

Mfr. #:
Buy BDX34C-S
Manufacturer:
Bourns
Description:
Darlington Transistors 100V 10A PNP
Lifecycle:
New from this manufacturer.
Delivery:
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