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HUFA75339S3ST

P1-P3P4-P6P7-P9P10-P10
©2001 Fairchild Semiconductor Corporation HUFA75339G3, HUFA75339P3, HUFA75339S3S Rev. B
HUFA75339G3, HUFA75339P3, HUFA75339S3S
75A, 55V, 0.012 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75339.
Features
• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER PACKAGE BRAND
HUFA75339G3 TO-247 75339G
HUFA75339P3 TO-220AB 75339P
HUFA75339S3S TO-263AB 75339S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75339S3ST.
D
G
S
JEDEC STYLE TO-247 JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet December 2001
©2001 Fairchild Semiconductor Corporation HUFA75339G3, HUFA75339P3, HUFA75339S3S Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
55 V
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
55 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20 V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
75
Figure 4
A
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
1.35
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11) 55 - - V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 50V, V
GS
= 0V - - 1 µA
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C--250µA
Gate to Source Leakage Current I
GSS
V
GS
= ±20V - - ±100 nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250µA (Figure 10) 2 - 4 V
Drain to Source On Resistance r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figure 9) - 0.010 0.012 Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
θJC
(Figure 3) - - 0.74
o
C/W
Thermal Resistance Junction to Ambient R
θJA
TO-247 - - 30
o
C/W
TO-220, TO-263 - - 62
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
ON
V
DD
= 30V, I
D
≅ 75A,
R
L
= 0.4Ω, V
GS
= 10V,
R
GS
= 5.1Ω
--110ns
Turn-On Delay Time t
d(ON)
-15- ns
Rise Time t
r
-60- ns
Turn-Off Delay Time t
d(OFF)
-20- ns
Fall Time t
f
-25- ns
Turn-Off Time t
OFF
- - 70 ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
g(TOT)
V
GS
= 0V to 20V V
DD
= 30V,
I
D
≅ 75A,
R
L
= 0.4Ω
I
g(REF)
= 1.0mA
(Figure 13)
- 110 130 nC
Gate Charge at 10V Q
g(10)
V
GS
= 0V to 10V - 60 75 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0V to 2V - 3.7 4.5 nC
Gate to Source Gate Charge Q
gs
-9-nC
Reverse Transfer Capacitance Q
gd
-23-nC
HUFA75339G3, HUFA75339P3, HUFA75339S3S
©2001 Fairchild Semiconductor Corporation HUFA75339G3, HUFA75339P3, HUFA75339S3S Rev. B
CAPACITANCE SPECIFICATIONS
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
- 2000 - pF
Output Capacitance C
OSS
- 700 - pF
Reverse Transfer Capacitance C
RSS
- 160 - pF
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
I
SD
= 75A - - 1.25 V
Reverse Recovery Time t
rr
I
SD
= 75A, dI
SD
/dt = 100A/µs--85ns
Reverse Recovered Charge Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/µs - - 160 nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125 17
5
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
20
40
60
80
50 75 100 125 150 17
5
0
25
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
0.1
1
2
0.01
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
HUFA75339G3, HUFA75339P3, HUFA75339S3S
P1-P3P4-P6P7-P9P10-P10

HUFA75339S3ST

Mfr. #:
Buy HUFA75339S3ST
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 55V 75A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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